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Semiconductors Transistors

BUZ72A

BUZ72A
Quantity excl. VAT VAT incl.
1 - 4 1.92$ 1.92$
5 - 9 1.82$ 1.82$
10 - 24 1.73$ 1.73$
25 - 49 1.63$ 1.63$
50 - 99 1.59$ 1.59$
100 - 249 1.55$ 1.55$
250+ 1.48$ 1.48$
Quantity U.P
1 - 4 1.92$ 1.92$
5 - 9 1.82$ 1.82$
10 - 24 1.73$ 1.73$
25 - 49 1.63$ 1.63$
50 - 99 1.59$ 1.59$
100 - 249 1.55$ 1.55$
250+ 1.48$ 1.48$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

BUZ72A. C(in): 330pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. Temperature: +175°C. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.23 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 10 ns. Technology: Enhancement Mode Power MOSFET Transistor. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 11/01/2025, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 55
FQP13N10

FQP13N10

C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr D...
FQP13N10
C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. On-resistance Rds On: 0.142 Ohms. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no
FQP13N10
C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. On-resistance Rds On: 0.142 Ohms. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no
Set of 1
2.38$ VAT incl.
(2.38$ excl. VAT)
2.38$

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Quantity in stock : 261
IRF520

IRF520

C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. ...
IRF520
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IRFZ44N

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STP80NF70

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C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. F...
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STP80NF06

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WPT-25GRAM

WPT-25GRAM

Operating temperature: -50...+180°C. Note: thermally conductive silicone grease. Note: syringe. Not...
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Quantity in stock : 152
STP55NF06

STP55NF06

C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. F...
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Quantity in stock : 5
2SC2166

2SC2166

Semiconductor material: silicon. FT: 27 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 6W....
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STD10P6F6

STD10P6F6

C(in): 340pF. Cost): 40pF. Channel type: P. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Fun...
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FRN01WK0101A10

FRN01WK0101A10

Resistance: 100 Ohms. Power: 1W. Resistor type: fuse resistor. Temperature stability: 350ppm/°C. Nu...
FRN01WK0101A10
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