Electronic components and equipment, for businesses and individuals

BUZ11

BUZ11
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Quantity excl. VAT VAT incl.
1 - 4 1.53$ 1.53$
5 - 9 1.45$ 1.45$
10 - 24 1.38$ 1.38$
25 - 49 1.30$ 1.30$
50 - 99 1.27$ 1.27$
100 - 249 1.24$ 1.24$
250 - 1688 1.71$ 1.71$
Quantity U.P
1 - 4 1.53$ 1.53$
5 - 9 1.45$ 1.45$
10 - 24 1.38$ 1.38$
25 - 49 1.30$ 1.30$
50 - 99 1.27$ 1.27$
100 - 249 1.24$ 1.24$
250 - 1688 1.71$ 1.71$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1688
Set of 1

BUZ11. C(in): 1500pF. Cost): 750pF. Channel type: N. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=100°C): 19A. ID (T=25°C): 30A. Idss (max): 100uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.03 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 30 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 07/04/2025, 10:25.

Equivalent products :

Quantity in stock : 357
IRF540N

IRF540N

C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. ...
IRF540N
C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF540N
C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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Quantity in stock : 221
IRF9540N

IRF9540N

C(in): 1300pF. Cost): 400pF. Channel type: P. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. ...
IRF9540N
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IRF9540N
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Quantity in stock : 184
IRF9540

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C(in): 1400pF. Cost): 590pF. Channel type: P. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. ...
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1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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NE555P

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ATTINY84A-PU

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Function: 8-bit AVR Microcontroller with 2K Bytes Flash. Clock signal: 1.8/2.7/5.5 V--0...4/0...10/0...
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Quantity in stock : 585
2N4401

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C(in): 30pF. Cost): 6.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: si...
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2N4403

2N4403

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. C...
2N4403
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Quantity in stock : 114
IRF540

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C(in): 1700pF. Cost): 560pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type o...
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Quantity in stock : 51
IRF540NS

IRF540NS

C(in): 1400pF. Cost): 330pF. Channel type: N. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. ...
IRF540NS
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LM2596S-12

LM2596S-12

Fixed/adjustable: Fixed output voltage. Conditioning: plastic tube. Conditioning unit: 45. Frequency...
LM2596S-12
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