Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.53$ | 2.53$ |
5 - 5 | 2.40$ | 2.40$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.53$ | 2.53$ |
5 - 5 | 2.40$ | 2.40$ |
BUW11A. Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-3PN. Type of transistor: NPN. Vcbo: 1000V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Quantity per case: 1. Function: high voltage, fast-switching. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 13:25.
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