Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.49$ | 1.49$ |
5 - 9 | 1.41$ | 1.41$ |
10 - 24 | 1.34$ | 1.34$ |
25 - 49 | 1.26$ | 1.26$ |
50 - 61 | 1.24$ | 1.24$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.49$ | 1.49$ |
5 - 9 | 1.41$ | 1.41$ |
10 - 24 | 1.34$ | 1.34$ |
25 - 49 | 1.26$ | 1.26$ |
50 - 61 | 1.24$ | 1.24$ |
BUZ102S. C(in): 1220pF. Cost): 410pF. Channel type: N. Type of transistor: MOSFET. ID (T=100°C): 37A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.018 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 12 ns. Technology: SIPMOS, PowerMosfet. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): P-TO263-3-2. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Quantity per case: 1. Quantity in stock updated on 25/12/2024, 06:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.