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BUZ102S

BUZ102S
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.49$ 1.49$
5 - 9 1.41$ 1.41$
10 - 24 1.34$ 1.34$
25 - 49 1.26$ 1.26$
50 - 61 1.24$ 1.24$
Quantity U.P
1 - 4 1.49$ 1.49$
5 - 9 1.41$ 1.41$
10 - 24 1.34$ 1.34$
25 - 49 1.26$ 1.26$
50 - 61 1.24$ 1.24$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 61
Set of 1

BUZ102S. C(in): 1220pF. Cost): 410pF. Channel type: N. Type of transistor: MOSFET. ID (T=100°C): 37A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.018 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 12 ns. Technology: SIPMOS, PowerMosfet. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): P-TO263-3-2. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Quantity per case: 1. Quantity in stock updated on 25/12/2024, 06:25.

Equivalent products :

Quantity in stock : 163
IRFZ48N

IRFZ48N

C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
IRFZ48N
C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFZ48N
C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$

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IRFZ44N

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BT137-800

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IRFR5305

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TL494CN

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RFD8P05SM

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LT1085CT-5

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