Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.10$ | 5.10$ |
5 - 9 | 4.85$ | 4.85$ |
10 - 24 | 4.59$ | 4.59$ |
25 - 49 | 4.34$ | 4.34$ |
50 - 58 | 4.23$ | 4.23$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.10$ | 5.10$ |
5 - 9 | 4.85$ | 4.85$ |
10 - 24 | 4.59$ | 4.59$ |
25 - 49 | 4.34$ | 4.34$ |
50 - 58 | 4.23$ | 4.23$ |
BUW12A. Semiconductor material: silicon. Max hFE gain: 50. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 20A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 11/01/2025, 13:25.
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