Transistors

Quantity per case: 1. FT: 250 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Marking on the case: 3Ls. Number of terminals: 4. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143. Type of transistor: PNP & PNP. Vcbo: 30 v. Collector/emitter voltage Vceo: 30 v. Function: PNP Silicon Dual Transistor. Spec info: screen printing/SMD code 3Ls. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 250. Collector current: 0.1A. Note: screen printing/SMD code C2. Marking on the case: C2. Pd (Power Dissipation, Max): 300mW. Type of transistor: PNP. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 32V. Vebo: 5V

Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Collector current: 0.1A. Note: >420. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCW60RC. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.2W

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 0.1A. Note: >120. Type of transistor: PNP. Collector/emitter voltage Vceo: 50V

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCW69R. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.25W

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: T1. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U1. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NPN-transistor. AF applications and switching. Max hFE gain: 63. Minimum hFE gain: 25. Collector current: 0.8A. Ic(pulse): 1A. Marking on the case: EKs. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Collector/emitter voltage Vceo: 125V. Vebo: 5V. Spec info: complementary transistor (pair) BCX42. BE diode: no. CE diode: no

Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP transistor. for AF and switching applications. Max hFE gain: 63. Minimum hFE gain: 25. Collector current: 0.8A. Ic(pulse): 1A. Marking on the case: DKs. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: PNP. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Collector/emitter voltage Vceo: 125V. Vebo: 5V. Spec info: complementary transistor (pair) BCX41. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DKs. Collector-emitter voltage Uceo [V]: 125V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Collector current: 1A. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Spec info: screen printing/SMD code AA

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AD. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AM. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Ic(pulse): 1.5A. Marking on the case: AH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: screen printing/SMD code AH

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Collector current: 1A. Ic(pulse): 1.5A. Note: screen printing/SMD code AK. Marking on the case: AK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BCX56-16

RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering (SMD). C(in): SOT-89. Cost): TO-243. CE diode: surface-mounted component (SMD). Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 160. Collector current: 1A. Ic(pulse): 1.5A. Note: screen printing/SMD code AL. Marking on the case: AL. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BCX56-16

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AL. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BD. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: bM. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Ic(pulse): 1.5A. Marking on the case: BH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: screen printing/SMD code BH

Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Collector current: 1A. Ic(pulse): 1.5A. Note: screen printing/SMD code BK. Marking on the case: BK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BCX53-10

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BL. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Note: screen printing/SMD code BL. Marking on the case: BL. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BCX53-16

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: NF-TR. Max hFE gain: 630. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: AK*. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: SMD AK* (AKp, AKt, AKW)

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 1000. Minimum hFE gain: 40. Collector current: 100mA. Ic(pulse): 200A. Pd (Power Dissipation, Max): 0.34W. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Vcbo: 45V. Saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 45V