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BD241C-ST

BD241C-ST
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.67$ 0.67$
10 - 24 0.64$ 0.64$
25 - 49 0.61$ 0.61$
50 - 99 0.57$ 0.57$
100 - 249 0.52$ 0.52$
250 - 267 0.51$ 0.51$
Quantity U.P
1 - 9 0.67$ 0.67$
10 - 24 0.64$ 0.64$
25 - 49 0.61$ 0.61$
50 - 99 0.57$ 0.57$
100 - 249 0.52$ 0.52$
250 - 267 0.51$ 0.51$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 267
Set of 1

BD241C-ST. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 01:25.

Equivalent products :

Quantity in stock : 89
TIP31C

TIP31C

Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. ...
TIP31C
Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no
TIP31C
Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no
Set of 1
0.69$ VAT incl.
(0.69$ excl. VAT)
0.69$

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CCAP10UF100V

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2N6027

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BC237B

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BTB24-600B

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Conditioning: plastic tube. Igt (max): 100mA. Igt (Type): 50mA. Ih (max): 80mA. Ih (Type): 80mA. IT(...
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TIP42C

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Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain:...
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