Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.67$ | 0.67$ |
10 - 24 | 0.64$ | 0.64$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 99 | 0.57$ | 0.57$ |
100 - 249 | 0.52$ | 0.52$ |
250 - 267 | 0.51$ | 0.51$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.67$ | 0.67$ |
10 - 24 | 0.64$ | 0.64$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 99 | 0.57$ | 0.57$ |
100 - 249 | 0.52$ | 0.52$ |
250 - 267 | 0.51$ | 0.51$ |
BD241C-ST. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 01:25.
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