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Semiconductors Transistors

BD241C

BD241C
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Quantity excl. VAT VAT incl.
1 - 4 0.60$ 0.60$
5 - 9 0.57$ 0.57$
10 - 24 0.54$ 0.54$
25 - 49 0.51$ 0.51$
50 - 99 0.50$ 0.50$
100 - 249 0.49$ 0.49$
250 - 1876497 0.46$ 0.46$
Quantity U.P
1 - 4 0.60$ 0.60$
5 - 9 0.57$ 0.57$
10 - 24 0.54$ 0.54$
25 - 49 0.51$ 0.51$
50 - 99 0.50$ 0.50$
100 - 249 0.49$ 0.49$
250 - 1876497 0.46$ 0.46$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1876497
Set of 1

BD241C. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Collector current: 3A. Power: 40W. Max frequency: 3MHz. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. Quantity in stock updated on 24/12/2024, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 117
TIP32C

TIP32C

Cost): 160pF. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production dat...
TIP32C
Cost): 160pF. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Collector current: 3A. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP31C. BE diode: no. CE diode: no
TIP32C
Cost): 160pF. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Collector current: 3A. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP31C. BE diode: no. CE diode: no
Set of 1
0.74$ VAT incl.
(0.74$ excl. VAT)
0.74$
Quantity in stock : 267
BD241C-ST

BD241C-ST

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. ...
BD241C-ST
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no
BD241C-ST
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no
Set of 1
0.67$ VAT incl.
(0.67$ excl. VAT)
0.67$

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