BD239C

Quantity	excl. VAT	VAT incl.
1 - 9	0.66$	0.66$
10 - 24	0.63$	0.63$
25 - 49	0.59$	0.59$
50 - 99	0.53$	0.53$
100 - 249	0.51$	0.51$
250 - 499	0.49$	0.49$
500 - 1070	0.47$	0.47$

Quantity	U.P
1 - 9	0.66$	0.66$
10 - 24	0.63$	0.63$
25 - 49	0.59$	0.59$
50 - 99	0.53$	0.53$
100 - 249	0.51$	0.51$
250 - 499	0.49$	0.49$
500 - 1070	0.47$	0.47$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1070

Set of 1

BD239C. Collector current: 2A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 30W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD240C. Quantity in stock updated on 24/12/2024, 14:25.

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Delivery in 2-3 days, with postal tracking!