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Transistors

3183 products available
Products per page :
Quantity in stock : 50
BCY59-9

BCY59-9

RoHS: no. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-206AA. Configuration:...
BCY59-9
RoHS: no. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-206AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BCY59-9. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN transistor
BCY59-9
RoHS: no. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-206AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BCY59-9. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN transistor
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 291
BCY78

BCY78

Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: NF/S. Collector curren...
BCY78
Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: NF/S. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.35W. Type of transistor: PNP. Collector/emitter voltage Vceo: 32V
BCY78
Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: NF/S. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.35W. Type of transistor: PNP. Collector/emitter voltage Vceo: 32V
Set of 5
0.88$ VAT incl.
(0.88$ excl. VAT)
0.88$
Quantity in stock : 2
BD109

BD109

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Collector current: 3A. Pd (Power ...
BD109
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 18.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V
BD109
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 18.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V
Set of 1
3.05$ VAT incl.
(3.05$ excl. VAT)
3.05$
Quantity in stock : 234
BD135

BD135

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Collector current...
BD135
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32)
BD135
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.35$ VAT incl.
(0.35$ excl. VAT)
0.35$
Quantity in stock : 98
BD135-16

BD135-16

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and ap...
BD135-16
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
BD135-16
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 65
BD136-16

BD136-16

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 1.5A. Pd (Powe...
BD136-16
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
BD136-16
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 2564
BD139

BD139

RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration:...
BD139
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Cutoff frequency ft [MHz]: 50 MHz. Collector current: 1.5A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD140. Housing: TO-126 (TO-225, SOT-32)
BD139
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Cutoff frequency ft [MHz]: 50 MHz. Collector current: 1.5A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD140. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.40$ VAT incl.
(0.40$ excl. VAT)
0.40$
Quantity in stock : 3008
BD139-10

BD139-10

RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration:...
BD139-10
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
BD139-10
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
0.68$ VAT incl.
(0.68$ excl. VAT)
0.68$
Quantity in stock : 1
BD139-10S

BD139-10S

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collec...
BD139-10S
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collector current: 1A. Power: 10W. Housing: TO-126 FULLPACK
BD139-10S
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collector current: 1A. Power: 10W. Housing: TO-126 FULLPACK
Set of 1
0.58$ VAT incl.
(0.58$ excl. VAT)
0.58$
Quantity in stock : 4861
BD139-16

BD139-16

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Quantity per c...
BD139-16
RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD140-16. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
BD139-16
RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD140-16. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.35$ VAT incl.
(0.35$ excl. VAT)
0.35$
Quantity in stock : 111
BD139-16-CDIL

BD139-16-CDIL

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250...
BD139-16-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no
BD139-16-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 44
BD139-16STU

BD139-16STU

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collec...
BD139-16STU
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collector current: 1.5A. Power: 12.5W. Housing: TO-126
BD139-16STU
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collector current: 1.5A. Power: 12.5W. Housing: TO-126
Set of 1
0.88$ VAT incl.
(0.88$ excl. VAT)
0.88$
Quantity in stock : 158
BD139-CDIL

BD139-CDIL

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250...
BD139-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1.5A. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no
BD139-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1.5A. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 2253
BD140

BD140

RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration:...
BD140
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD139. Housing: TO-126 (TO-225, SOT-32)
BD140
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD139. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.40$ VAT incl.
(0.40$ excl. VAT)
0.40$
Quantity in stock : 16
BD140-10

BD140-10

RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration:...
BD140-10
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
BD140-10
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 1879831
BD140-16

BD140-16

Housing: TO-126. Manufacturer's marking: BD140-16. Collector-emitter voltage Uceo [V]: 80V. Collecto...
BD140-16
Housing: TO-126. Manufacturer's marking: BD140-16. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -80V. Collector current: -1.5A. Power: 12.5W. Max frequency: 50MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD139-16. Housing: TO-126 (TO-225, SOT-32)
BD140-16
Housing: TO-126. Manufacturer's marking: BD140-16. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 12.5W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -80V. Collector current: -1.5A. Power: 12.5W. Max frequency: 50MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD139-16. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 139
BD140-CDIL

BD140-CDIL

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250...
BD140-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 25. Collector current: 1.5A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-126. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD139. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
BD140-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 25. Collector current: 1.5A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-126. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD139. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.28$ VAT incl.
(0.28$ excl. VAT)
0.28$
Quantity in stock : 221
BD159

BD159

Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.5A. Pd (Power Dissipatio...
BD159
Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO126. Type of transistor: NPN. Collector/emitter voltage Vceo: 375V. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
BD159
Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO126. Type of transistor: NPN. Collector/emitter voltage Vceo: 375V. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Quantity in stock : 141
BD166

BD166

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current:...
BD166
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V
BD166
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 111
BD167

BD167

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current:...
BD167
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V
BD167
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V
Set of 1
0.58$ VAT incl.
(0.58$ excl. VAT)
0.58$
Quantity in stock : 341
BD179G

BD179G

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration:...
BD179G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD179G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 3mA. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 0.03W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
BD179G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD179G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 3mA. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 0.03W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
0.62$ VAT incl.
(0.62$ excl. VAT)
0.62$
Out of stock
BD230

BD230

Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: NF-L. Collector curren...
BD230
Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 12.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V
BD230
Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 12.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 729
BD237

BD237

RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration:...
BD237
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Cutoff frequency ft [MHz]: 3 MHz. Collector current: 2A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD238. Housing: TO-126 (TO-225, SOT-32)
BD237
RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Cutoff frequency ft [MHz]: 3 MHz. Collector current: 2A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD238. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 86
BD237-CDIL

BD237-CDIL

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: sil...
BD237-CDIL
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 2A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD238. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
BD237-CDIL
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 2A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BD238. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.50$ VAT incl.
(0.50$ excl. VAT)
0.50$
Quantity in stock : 230
BD237G

BD237G

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration:...
BD237G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
BD237G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
0.60$ VAT incl.
(0.60$ excl. VAT)
0.60$

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