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BD243C-STM

BD243C-STM
Quantity excl. VAT VAT incl.
1 - 4 2.02$ 2.02$
5 - 9 1.92$ 1.92$
10 - 24 1.82$ 1.82$
25 - 49 1.72$ 1.72$
50 - 80 1.68$ 1.68$
Quantity U.P
1 - 4 2.02$ 2.02$
5 - 9 1.92$ 1.92$
10 - 24 1.82$ 1.82$
25 - 49 1.72$ 1.72$
50 - 80 1.68$ 1.68$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 80
Set of 1

BD243C-STM. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 05:25.

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Quantity in stock : 291
BD243CG

BD243CG

Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Col...
BD243CG
Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Collector/emitter voltage Vceo: 100V
BD243CG
Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Collector/emitter voltage Vceo: 100V
Set of 1
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 257
TIP41C

TIP41C

Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. ...
TIP41C
Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP42C. BE diode: no. CE diode: no
TIP41C
Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP42C. BE diode: no. CE diode: no
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$

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2SC1815

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CFR1-4W-100R

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Resistance: 100 Ohms. Power: 0.25W. Resistor type: carbon layer. Breakdown voltage: 500V. Operating ...
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2SA1015GR

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