Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.81$ | 2.81$ |
5 - 9 | 2.67$ | 2.67$ |
10 - 24 | 2.53$ | 2.53$ |
25 - 49 | 2.39$ | 2.39$ |
50 - 99 | 2.33$ | 2.33$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.81$ | 2.81$ |
5 - 9 | 2.67$ | 2.67$ |
10 - 24 | 2.53$ | 2.53$ |
25 - 49 | 2.39$ | 2.39$ |
50 - 99 | 2.33$ | 2.33$ |
BD249C. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 25. Minimum hFE gain: 5. Collector current: 25A. Ic(pulse): 40A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD250C. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 17:25.
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