Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.47$ | 1.47$ |
5 - 9 | 1.40$ | 1.40$ |
10 - 24 | 1.32$ | 1.32$ |
25 - 49 | 1.25$ | 1.25$ |
50 - 99 | 1.22$ | 1.22$ |
100 - 249 | 1.21$ | 1.21$ |
250 - 277 | 1.38$ | 1.38$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.47$ | 1.47$ |
5 - 9 | 1.40$ | 1.40$ |
10 - 24 | 1.32$ | 1.32$ |
25 - 49 | 1.25$ | 1.25$ |
50 - 99 | 1.22$ | 1.22$ |
100 - 249 | 1.21$ | 1.21$ |
250 - 277 | 1.38$ | 1.38$ |
BD244CG. Housing: TO-220. Resistor B: Power Transistor. BE resistor: -100V. C(in): -6A. Cost): 65W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65°C...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 14:25.
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