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Semiconductors
Transistors

Transistors

3182 products available
Products per page :
1...303132 3334...128
Quantity in stock : 44
AF239S

AF239S

Quantity per case: 1...
AF239S
Quantity per case: 1
AF239S
Quantity per case: 1
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Out of stock
AF279

AF279

Quantity per case: 1. Spec info: substitute...
AF279
Quantity per case: 1. Spec info: substitute
AF279
Quantity per case: 1. Spec info: substitute
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 1
AF367

AF367

Quantity per case: 1...
AF367
Quantity per case: 1
AF367
Quantity per case: 1
Set of 1
1.90$ VAT incl.
(1.90$ excl. VAT)
1.90$
Quantity in stock : 33
AF379

AF379

Quantity per case: 1. Semiconductor material: GE. FT: 1250 MHz. Collector current: 20mA. Number of t...
AF379
Quantity per case: 1. Semiconductor material: GE. FT: 1250 MHz. Collector current: 20mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.1W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-39. Housing (according to data sheet): SOT-39. Type of transistor: PNP. Vcbo: 20V. Collector/emitter voltage Vceo: 13V. Vebo: 0.3V
AF379
Quantity per case: 1. Semiconductor material: GE. FT: 1250 MHz. Collector current: 20mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.1W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-39. Housing (according to data sheet): SOT-39. Type of transistor: PNP. Vcbo: 20V. Collector/emitter voltage Vceo: 13V. Vebo: 0.3V
Set of 1
0.71$ VAT incl.
(0.71$ excl. VAT)
0.71$
Quantity in stock : 240
AF4502C

AF4502C

Channel type: N-P. Marking on the case: 4502C. Number of terminals: 8. Pd (Power Dissipation, Max): ...
AF4502C
Channel type: N-P. Marking on the case: 4502C. Number of terminals: 8. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.011 Ohms (Q1), 0.1016 Ohms (Q2)
AF4502C
Channel type: N-P. Marking on the case: 4502C. Number of terminals: 8. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.011 Ohms (Q1), 0.1016 Ohms (Q2)
Set of 1
2.94$ VAT incl.
(2.94$ excl. VAT)
2.94$
Quantity in stock : 27
AIMW120R035M1HXKSA1

AIMW120R035M1HXKSA1

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 52A. On-resistance ...
AIMW120R035M1HXKSA1
Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 52A. On-resistance Rds On: 0.035 Ohms. Power: 228W. Housing: TO-247AC. Built-in diode: yes. Drain-source voltage (Vds): 1200V
AIMW120R035M1HXKSA1
Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 52A. On-resistance Rds On: 0.035 Ohms. Power: 228W. Housing: TO-247AC. Built-in diode: yes. Drain-source voltage (Vds): 1200V
Set of 1
31.92$ VAT incl.
(31.92$ excl. VAT)
31.92$
Out of stock
ALF08N20V

ALF08N20V

C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. ...
ALF08N20V
C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Spec info: complementary transistor (pair) ALF08P20V. G-S Protection: no
ALF08N20V
C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Spec info: complementary transistor (pair) ALF08P20V. G-S Protection: no
Set of 1
31.06$ VAT incl.
(31.06$ excl. VAT)
31.06$
Quantity in stock : 7
ALF08P20V

ALF08P20V

C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. ...
ALF08P20V
C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Spec info: complementary transistor (pair) ALF08N20V. G-S Protection: no
ALF08P20V
C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Spec info: complementary transistor (pair) ALF08N20V. G-S Protection: no
Set of 1
21.00$ VAT incl.
(21.00$ excl. VAT)
21.00$
Quantity in stock : 870
AO3400A

AO3400A

C(in): 630pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. F...
AO3400A
C(in): 630pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. IDss (min): 1uA. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 22m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
AO3400A
C(in): 630pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. IDss (min): 1uA. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 22m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 402
AO3401A

AO3401A

C(in): 933pF. Cost): 108pF. Channel type: P. Trr Diode (Min.): 21 ns. Type of transistor: MOSFET. Fu...
AO3401A
C(in): 933pF. Cost): 108pF. Channel type: P. Trr Diode (Min.): 21 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 25A. ID (T=100°C): 3.8A. ID (T=25°C): 4.3A. Idss (max): 5uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) max.: 1.3V. Vgs(th) min.: 0.6V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.036 Ohms. Spec info: Operation gate voltage as low as 2.5V. Drain-source protection : yes. G-S Protection: no
AO3401A
C(in): 933pF. Cost): 108pF. Channel type: P. Trr Diode (Min.): 21 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 25A. ID (T=100°C): 3.8A. ID (T=25°C): 4.3A. Idss (max): 5uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) max.: 1.3V. Vgs(th) min.: 0.6V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.036 Ohms. Spec info: Operation gate voltage as low as 2.5V. Drain-source protection : yes. G-S Protection: no
Set of 1
0.48$ VAT incl.
(0.48$ excl. VAT)
0.48$
Quantity in stock : 162
AO3404A

AO3404A

C(in): 621pF. Cost): 118pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. ...
AO3404A
C(in): 621pF. Cost): 118pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Id(imp): 30A. ID (T=100°C): 4.9A. ID (T=25°C): 5.8A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 23.4m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.1 ns. Td(on): 4.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
AO3404A
C(in): 621pF. Cost): 118pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Id(imp): 30A. ID (T=100°C): 4.9A. ID (T=25°C): 5.8A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 23.4m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.1 ns. Td(on): 4.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 126
AO3407A

AO3407A

C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 11 n...
AO3407A
C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. ID (T=100°C): 3.5A. ID (T=25°C): 4.1A. Idss: 1uA. Idss (max): 4.1A. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.052 Ohms. G-S Protection: no
AO3407A
C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. ID (T=100°C): 3.5A. ID (T=25°C): 4.1A. Idss: 1uA. Idss (max): 4.1A. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.052 Ohms. G-S Protection: no
Set of 1
3.32$ VAT incl.
(3.32$ excl. VAT)
3.32$
Quantity in stock : 279
AO3416

AO3416

C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 17....
AO3416
C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 17.7 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 30A. ID (T=100°C): 5.2A. ID (T=25°C): 6.5A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 18M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51.7 ns. Td(on): 6.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Number of terminals: 3. Quantity per case: 1. Spec info: ESD protected. G-S Protection: yes
AO3416
C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 17.7 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 30A. ID (T=100°C): 5.2A. ID (T=25°C): 6.5A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 18M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51.7 ns. Td(on): 6.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Number of terminals: 3. Quantity per case: 1. Spec info: ESD protected. G-S Protection: yes
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 228
AO4407A

AO4407A

C(in): 2060pF. Cost): 370pF. Channel type: P. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. I...
AO4407A
C(in): 2060pF. Cost): 370pF. Channel type: P. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 7.4A. ID (T=25°C): 9.2A. Idss (max): 50uA. IDss (min): 10uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.7W. On-resistance Rds On: 0.0085 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 11 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 1. Note: screen printing/SMD code 4407A. Drain-source protection : yes. G-S Protection: no
AO4407A
C(in): 2060pF. Cost): 370pF. Channel type: P. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 7.4A. ID (T=25°C): 9.2A. Idss (max): 50uA. IDss (min): 10uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.7W. On-resistance Rds On: 0.0085 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 11 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 1. Note: screen printing/SMD code 4407A. Drain-source protection : yes. G-S Protection: no
Set of 1
0.68$ VAT incl.
(0.68$ excl. VAT)
0.68$
Quantity in stock : 343
AO4427

AO4427

C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 28 ...
AO4427
C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 28 ns. Type of transistor: FET. Function: Switching or PWM applications. Id(imp): 60A. ID (T=100°C): 10.5A. ID (T=25°C): 12.5A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0094 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 1. G-S Protection: yes
AO4427
C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 28 ns. Type of transistor: FET. Function: Switching or PWM applications. Id(imp): 60A. ID (T=100°C): 10.5A. ID (T=25°C): 12.5A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0094 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 1. G-S Protection: yes
Set of 1
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 65
AO4430

AO4430

C(in): 6060pF. Cost): 638pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min....
AO4430
C(in): 6060pF. Cost): 638pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 33.5 ns. Type of transistor: MOSFET. Id(imp): 80A. ID (T=100°C): 15A. ID (T=25°C): 18A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0047 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51.5 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Quantity per case: 1. Function: Low side switch in Notebook CPU core power converter. Spec info: Ultra-low gate resistance. G-S Protection: no
AO4430
C(in): 6060pF. Cost): 638pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 33.5 ns. Type of transistor: MOSFET. Id(imp): 80A. ID (T=100°C): 15A. ID (T=25°C): 18A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0047 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51.5 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Quantity per case: 1. Function: Low side switch in Notebook CPU core power converter. Spec info: Ultra-low gate resistance. G-S Protection: no
Set of 1
1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$
Out of stock
AO4600

AO4600

Channel type: N-P. Function: 0.027R&0.049R (27 & 49m Ohms). Number of terminals: 8. Pd (Power Dissip...
AO4600
Channel type: N-P. Function: 0.027R&0.049R (27 & 49m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel
AO4600
Channel type: N-P. Function: 0.027R&0.049R (27 & 49m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel
Set of 1
4.67$ VAT incl.
(4.67$ excl. VAT)
4.67$
Quantity in stock : 22
AO4601

AO4601

Channel type: N-P. Function: 0.055R&0.019R (55 & 19m Ohms). Number of terminals: 8. Pd (Power Dissip...
AO4601
Channel type: N-P. Function: 0.055R&0.019R (55 & 19m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel
AO4601
Channel type: N-P. Function: 0.055R&0.019R (55 & 19m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel
Set of 1
1.48$ VAT incl.
(1.48$ excl. VAT)
1.48$
Quantity in stock : 2
AO4604

AO4604

Channel type: N-P. Function: 0.028R&0.035R (28 & 35m Ohms). Number of terminals: 8. Pd (Power Dissip...
AO4604
Channel type: N-P. Function: 0.028R&0.035R (28 & 35m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel
AO4604
Channel type: N-P. Function: 0.028R&0.035R (28 & 35m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel
Set of 1
8.95$ VAT incl.
(8.95$ excl. VAT)
8.95$
Quantity in stock : 248
AO4606

AO4606

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 28...
AO4606
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 28/35m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel. Spec info: substitute for MOSFET
AO4606
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 28/35m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel. Spec info: substitute for MOSFET
Set of 1
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$
Quantity in stock : 40
AO4607

AO4607

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/inst...
AO4607
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. On-resistance Rds On: 0.028 Ohms & 0.035 Ohms. Technology: Complementary MOSFET transistors, N-channel and P-channel, SCHOTTKY VDS=30V, IF=3A
AO4607
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. On-resistance Rds On: 0.028 Ohms & 0.035 Ohms. Technology: Complementary MOSFET transistors, N-channel and P-channel, SCHOTTKY VDS=30V, IF=3A
Set of 1
2.45$ VAT incl.
(2.45$ excl. VAT)
2.45$
Quantity in stock : 67
AO4611

AO4611

Channel type: N-P. Quantity per case: 2. Type of transistor: MOSFET. Function: Complementary Enhance...
AO4611
Channel type: N-P. Quantity per case: 2. Type of transistor: MOSFET. Function: Complementary Enhancement Mode FET. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Spec info: 0.025 Ohms & 0.042 Ohms
AO4611
Channel type: N-P. Quantity per case: 2. Type of transistor: MOSFET. Function: Complementary Enhancement Mode FET. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Spec info: 0.025 Ohms & 0.042 Ohms
Set of 1
1.64$ VAT incl.
(1.64$ excl. VAT)
1.64$
Quantity in stock : 223
AO4614B

AO4614B

Channel type: N-P. Function: Complementary Enhancement Mode FET. Idss: 1...5uA. Number of terminals:...
AO4614B
Channel type: N-P. Function: Complementary Enhancement Mode FET. Idss: 1...5uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16.2/4.8 ns. Td(on): 6.4 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 2. Note: IDM--30Ap & 30Ap. Spec info: 0.024 Ohms & 0.036 Ohms
AO4614B
Channel type: N-P. Function: Complementary Enhancement Mode FET. Idss: 1...5uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16.2/4.8 ns. Td(on): 6.4 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 2. Note: IDM--30Ap & 30Ap. Spec info: 0.024 Ohms & 0.036 Ohms
Set of 1
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$
Quantity in stock : 68
AO4617

AO4617

Channel type: N-P. Function: 0.032R&0.048R (32 & 48m Ohms). Number of terminals: 8. RoHS: yes. Assem...
AO4617
Channel type: N-P. Function: 0.032R&0.048R (32 & 48m Ohms). Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: MOS-N&P-FET, Complementary ESD rating--3000V (HBM)
AO4617
Channel type: N-P. Function: 0.032R&0.048R (32 & 48m Ohms). Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: MOS-N&P-FET, Complementary ESD rating--3000V (HBM)
Set of 1
1.41$ VAT incl.
(1.41$ excl. VAT)
1.41$
Quantity in stock : 245
AO4619

AO4619

Channel type: N-P. Function: MOSFET transistor. Rds (ON) very low. Number of terminals: 8. Pd (Power...
AO4619
Channel type: N-P. Function: MOSFET transistor. Rds (ON) very low. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.024 Ohms & 0.048 Ohms
AO4619
Channel type: N-P. Function: MOSFET transistor. Rds (ON) very low. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.024 Ohms & 0.048 Ohms
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
1...303132 3334...128

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