Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.31$ | 0.31$ |
10 - 24 | 0.30$ | 0.30$ |
25 - 49 | 0.28$ | 0.28$ |
50 - 99 | 0.26$ | 0.26$ |
100 - 249 | 0.26$ | 0.26$ |
250 - 499 | 0.25$ | 0.25$ |
500 - 870 | 0.24$ | 0.24$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.31$ | 0.31$ |
10 - 24 | 0.30$ | 0.30$ |
25 - 49 | 0.28$ | 0.28$ |
50 - 99 | 0.26$ | 0.26$ |
100 - 249 | 0.26$ | 0.26$ |
250 - 499 | 0.25$ | 0.25$ |
500 - 870 | 0.24$ | 0.24$ |
AO3400A. C(in): 630pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. IDss (min): 1uA. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 22m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 04:25.
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