Transistors

C(in): 950pF. Cost): 140pF. Channel type: N. Trr Diode (Min.): 900ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 200uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 1.87 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Technology: TT-MOSV. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -...+150°. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 740pF. Cost): 380pF. Channel type: N. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. ID (T=100°C): 15A. ID (T=25°C): 25A. Idss (max): 10uA. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.045 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 10 ns. Housing: TO-220FP. Housing (according to data sheet): TO–220FM. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

C(in): 2150pF. Cost): 220pF. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Id(imp): 30A. ID (T=25°C): 10A. Idss (max): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.05 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: FIELD EFFECT MOS Type--(TT-MOS-III). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: DC-DC Converter, Relay & Motor Drive. G-S Protection: yes

C(in): 790pF. Cost): 240pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 75A. ID (T=100°C): 12.5A. ID (T=25°C): 25A. Idss (max): 10uA. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.028 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 20 ns. Technology: MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

C(in): 160pF. Cost): 85pF. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 8A. ID (T=100°C): 1.6A. ID (T=25°C): 2A. Idss (max): 10uA. Marking on the case: KE. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.32 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 20 ns. Technology: MOS FET. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89 ( MTP3 ). Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.8V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code KE. G-S Protection: yes

C(in): 550pF. Cost): 115pF. Channel type: N. Trr Diode (Min.): 1.3us. Type of transistor: MOSFET. Id(imp): 16A. ID (T=25°C): 4A. Idss (max): 100uA. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 12 ns. Technology: MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. Function: POWER Switching MOSFET, Industrial Use. Drain-source protection : yes. G-S Protection: no

C(in): 5400pF. Cost): 1900pF. Channel type: N. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=100°C): n/a. ID (T=25°C): 30A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 38m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 190 ns. Td(on): 55 ns. Technology: Field Effect Transistor MOS-V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Operating temperature: -...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Number of terminals: 3. Quantity per case: 1. Function: Switching mode Regulator, DC-DC Converter, Motor Driver. Drain-source protection : yes. G-S Protection: yes

C(in): 650pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 2us. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 20A. ID (T=25°C): 5A. Idss (max): 100uA. IDss (min): 0.1uA. Equivalents: FS5KM-10-AW. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 18 ns. Technology: V-MOS (F). Housing: TO-220FP. Housing (according to data sheet): TO220F-3L. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Id(imp): 28A. ID (T=25°C): 7A. Idss (max): 7A. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 1.62 Ohms. Assembly/installation: PCB through-hole mounting. Technology: SILICON POWER MOS-FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 800V. Quantity per case: 1. Function: High Speed Switching, Low on-res, Low driving power

C(in): 1200pF. Cost): 140pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 0.75us. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 40A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.58 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 17 ns. Technology: Super FAP-G Series POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Note: Panasonic--B1CERR000022. Quantity per case: 1. G-S Protection: no

C(in): 2280pF. Cost): 290pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 0.7us. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 84A. ID (T=25°C): 21A. Idss (max): 250uA. IDss (min): 25uA. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 78 ns. Td(on): 26 ns. Technology: Super FAP-G Series POWER MOSFET. Housing (according to data sheet): TO-3PF. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). G-S Protection: no

C(in): 740pF. Cost): 105pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 2.3 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 28A. ID (T=100°C): 7A. ID (T=25°C): 7A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 1.46 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 21 ns. Technology: Super FAP-G Series POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 1050pF. Cost): 110pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 32A. ID (T=100°C): 8A. ID (T=25°C): 8A. Idss (max): 100uA. Marking on the case: K3561. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.75 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 26 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: yes

C(in): 1050pF. Cost): 110pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 24A. ID (T=100°C): 6A. ID (T=25°C): 6A. Idss: 100uA. Idss (max): 6A. Marking on the case: K3562. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.9 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Drain-source protection : yes. G-S Protection: yes

C(in): 550pF. Cost): 70pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 20A. ID (T=100°C): 5A. ID (T=25°C): 5A. Idss: 100uA. Idss (max): 5A. Marking on the case: K3563. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1.35 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. G-S Protection: yes

C(in): 700pF. Cost): 75pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 9A. ID (T=100°C): 3A. ID (T=25°C): 3A. Idss (max): 100uA. Marking on the case: K3564. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 3.7 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 125 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIV). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: yes

C(in): 1150pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 900ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 15A. ID (T=100°C): 5A. ID (T=25°C): 5A. Idss (max): 100uA. Marking on the case: K3565. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 70 ns. Technology: Field Effect (TT-MOSIV). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. G-S Protection: yes

C(in): 470pF. Cost): 50pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 720 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 7.5A. ID (T=100°C): 2.5A. ID (T=25°C): 2.5A. Idss (max): 100uA. Marking on the case: K3566. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 5.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIV). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: yes

Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 14A. ID (T=100°C): 3.5A. ID (T=25°C): 3.5A. Idss: 100mA. Idss (max): 3.5A. Marking on the case: K3567. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1.7 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. G-S Protection: yes

C(in): 1500pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 48A. ID (T=100°C): 12A. ID (T=25°C): 12A. Idss (max): 100uA. Marking on the case: K3568. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 50 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. G-S Protection: yes

C(in): 1500pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 40A. ID (T=25°C): 10A. Idss (max): 100uA. Marking on the case: K3569. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Weight: 1.7g. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 50 ns. Housing: TO-220FP. Housing (according to data sheet): SC-67, 2-10U1B. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Technology: Field Effect Transistor, MOS Type (TT-MOSVI). Drain-source protection : yes. G-S Protection: yes

C(in): 700pF. Cost): 75pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Idss: 100uA. Number of terminals: 3. On-resistance Rds On: 3.7 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 125 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIV). Housing: TO-92. Housing (according to data sheet): TO-92. G-S Protection: yes

Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 30A. ID (T=100°C): 7.5A. ID (T=25°C): 7.5A. Idss (max): 100uA. Marking on the case: K3667. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.75 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 50 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: yes

C(in): 1100pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 3.2us. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 36A. ID (T=25°C): 9A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: K3679. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 95W. On-resistance Rds On: 1.22 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 25 ns. Technology: POWER MOSFET Super FAP-G Series. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 430pF. Cost): 60pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1us. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 14.8A. ID (T=100°C): 3.7A. ID (T=25°C): 3.7A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: K3699. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 43W. On-resistance Rds On: 3.31 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 19 ns. Technology: Super FAP-G Series. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. G-S Protection: no