Transistors

C(in): 2200pF. Cost): 190pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1700 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 24A. ID (T=25°C): 8A. Idss (max): 100uA. Marking on the case: K3799. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 65 ns. Technology: Field Effect (TT-MOSIV). Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SC-67 ). Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: yes

C(in): 96pF. Cost): 29pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 2.8A. ID (T=25°C): 0.7A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: K3850. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 15W. On-resistance Rds On: 14 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 9 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Drain-source protection : no. G-S Protection: no

C(in): 2200pF. Cost): 45pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1.4us. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 27A. ID (T=100°C): 5.3A. ID (T=25°C): 9A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: K3878. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 65 ns. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Vth=2.0 to 4.0V (VDS=10V, ID=1mA). G-S Protection: yes

C(in): 4250pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1350 ns. Type of transistor: MOSFET. Function: Switching Regulator. Id(imp): 80A. ID (T=25°C): 20A. Idss (max): 500uA. Marking on the case: K3911. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.22 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 45 ns. Technology: Field Effect MOS Type(MACH-II-MOS VI). Housing: TO-3PN. Housing (according to data sheet): 2-16C1B. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: yes

C(in): 4250pF. Cost): 420pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 380 ns. Type of transistor: MOSFET. Function: Switching Regulator. Id(imp): 92A. ID (T=25°C): 23A. Idss (max): 500uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 45 ns. Technology: Field Effect MOS Type(MACH-II-MOS VI). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. G-S Protection: yes

C(in): 2400pF. Cost): 220pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 52A. ID (T=25°C): 13A. Idss (max): 100uA. Marking on the case: K4012. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.33 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 70 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Technology: Field Effect Transistor, MOS Type (TT-MOS VI). G-S Protection: yes

C(in): 1400pF. Cost): 130pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1100 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 18A. ID (T=25°C): 6A. Idss (max): 100uA. Marking on the case: K4013 Q. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 1.35 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 80 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( 2-10U1B ). Operating temperature: -...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Technology: Field Effect Transistor, MOS Type (TT-MOS IV). Drain-source protection : yes. G-S Protection: yes

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter, Motor driver. Id(imp): 20A. ID (T=25°C): 5A. Idss (max): 5A. Pd (Power Dissipation, Max): 20W. On-resistance Rds On: 0.09 Ohms. Assembly/installation: PCB through-hole mounting. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. Technology: Field Effect Transistor, MOS Type (U-MOS III)

C(in): 2900pF. Cost): 450pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High Current Switching Applications. Id(imp): 180A. ID (T=100°C): 28A. ID (T=25°C): 60A. Idss (max): 1uA. IDss (min): 1uA. Marking on the case: K4075. Number of terminals: 3. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 5.2m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 54 ns. Td(on): 18 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V. Technology: POWER MOSFET, Field Effect Transistor. G-S Protection: no

C(in): 3400pF. Cost): 320pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 80A. ID (T=100°C): n/a. ID (T=25°C): 20A. Idss (max): 100uA. IDss (min): n/a. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.21 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 280 ns. Td(on): 130 ns. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Operating temperature: -...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Technology: Field Effect Transistor, MOS Type (MOS VI). Drain-source protection : yes. G-S Protection: yes

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: V-MOS. ID (T=25°C): 5A. Idss (max): 5A. Pd (Power Dissipation, Max): 100W. Voltage Vds(max): 800V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 5A. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 2.5 Ohms. Voltage Vds(max): 850V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 5A. Idss (max): 5A. Pd (Power Dissipation, Max): 100W. Technology: V-MOS. Voltage Vds(max): 800V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 1.5A. ID (T=25°C): 3A. Idss (max): 3A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 4 Ohms. Technology: V-MOS. Voltage Vds(max): 800V. Note: (F)

C(in): 900pF. Cost): 90pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 12A. ID (T=100°C): 3A. ID (T=25°C): 3A. Idss (max): 500uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. On-resistance Rds On: 4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 60 ns. Technology: V-MOS S-L. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Spec info: Samsung B4054-0018. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 1.8A. ID (T=25°C): 0.6A. Idss (max): 0.6A. Pd (Power Dissipation, Max): 0.9W. On-resistance Rds On: 1.2 Ohms. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92MOD. Voltage Vds(max): 100V. Function: Relay Drive, Motor Drive

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 12A. ID (T=25°C): 25A. Idss (max): 25A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.046 Ohms. Technology: V-MOS. Voltage Vds(max): 60V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 26A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: F-II Series POWER MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 800V

Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Function: Fast-switching. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Marking on the case: D13009K. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220C. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1

Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Marking on the case: D209L. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Tf(min): 0.7us. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Number of terminals: 3. Quantity per case: 1

Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 20. Minimum hFE gain: 16. Collector current: 1.5A. Ic(pulse): 3A. Marking on the case: 4202BD. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Tf(min): 0.7us. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.18V. Collector/emitter voltage Vceo: 490V. Vebo: 13V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes

C(in): 7pF. Cost): 5.9pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. Id(imp): 0.6A. ID (T=25°C): 0.15A. Idss (max): 10uA. Pd (Power Dissipation, Max): 0.15W. On-resistance Rds On: 3.7 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 150 ns. Td(on): 19 ns. Technology: silicon MOSFET transistor. Housing: SMD. Housing (according to data sheet): SSFP. Voltage Vds(max): 30 v. Gate/source voltage (off) max.: 1.3V. Gate/source voltage (off) min.: 0.4V. Drain-source protection : yes. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-343. Configuration: surface-mounted component (SMD). Number of terminals: 4. Drain-source voltage Uds [V]: 12.5V. Drain Current Id [A] @ 25°C: 30mA. Gate breakdown voltage Ugs [V]: 1V. Ciss Gate Capacitance [pF]: 2pF. Maximum dissipation Ptot [W]: 0.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +125°C

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 45V/40V. Collector current Ic [A], max.: 300mA. Maximum dissipation Ptot [W]: 0.5W

RoHS: no. Housing: PCB soldering. Housing: TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: A743. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor