Transistors

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Complementary MOSFET transistors, N-channel and P-channel. Spec info: 0.024 Ohm & 0.038 Ohm

C(in): 1980pF. Cost): 317pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 11.2 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 10A. ID (T=25°C): 12.7A. Idss (max): 20mA. IDss (min): 0.02mA. Number of terminals: 8. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 0.0098 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 27 ns. Td(on): 5.5 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2.3V. Vgs(th) min.: 1.5V. Quantity per case: 1. Function: FET in SMPS, load switching. G-S Protection: no

C(in): 3760pF. Cost): 682pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=100°C): 16A. ID (T=25°C): 20A. Idss: 0.1mA. Idss (max): 20mA. IDss (min): 0.1mA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0039 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 34 ns. Td(on): 9.5 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V. Quantity per case: 1. G-S Protection: no

C(in): 2154pF. Cost): 474pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. Id(imp): 180A. ID (T=100°C): 9.6A. ID (T=25°C): 12A. Idss (max): 20mA. IDss (min): 0.1mA. Number of terminals: 8. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 0.0058 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25.2 ns. Td(on): 6.8 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.3V. Quantity per case: 1. Function: t=10sec, Idsm--16.5A/25°C, Idsm--13A/70°C. G-S Protection: no

Channel type: N. Trr Diode (Min.): 27.5us. Function: MOSFET transistor. Rds (ON) very low. Id(imp): 20A. ID (T=100°C): 3.6A. ID (T=25°C): 4.5A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 46m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 4.7V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 2

C(in): 4360pF. Cost): 1050pF. Channel type: P. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 39.5 ns. Type of transistor: MOSFET. Id(imp): 200A. ID (T=100°C): 65A. ID (T=25°C): 85A. Idss (max): 5uA. IDss (min): 0.01uA. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 5.1M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51 ns. Td(on): 18 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. G-S Protection: no

C(in): 920pF. Cost): 190pF. Channel type: P. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 21.4 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 18A. ID (T=25°C): 18A. Idss (max): 5uA. IDss (min): 0.003uA. Marking on the case: D405. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 24.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 9 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: complementary transistor (pair) AOD408. G-S Protection: no

C(in): 1040pF. Cost): 180pF. Channel type: N. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 19 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 18A. ID (T=25°C): 18A. Idss (max): 5uA. IDss (min): 1uA. Marking on the case: D408. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 13.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17.4 ns. Td(on): 4.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: complementary transistor (pair) AOD405. G-S Protection: no

C(in): 2977pF. Cost): 241pF. Channel type: P. Conditioning: roll. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 18A. ID (T=25°C): 26A. Idss (max): 5uA. IDss (min): 0.003uA. Marking on the case: D409. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 32m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1.2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Drain-source protection : yes. G-S Protection: no

C(in): 450pF. Cost): 61pF. Channel type: N. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 27.6 ns. Type of transistor: MOSFET. Id(imp): 30A. ID (T=100°C): 12A. ID (T=25°C): 12A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 20W. On-resistance Rds On: 47m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 4.2 ns. Technology: 'Latest Trench Power MOSFET technology'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. G-S Protection: no

C(in): 951pF. Cost): 373pF. Channel type: N. Conditioning: roll. Trr Diode (Min.): 10.2 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 96A. ID (T=100°C): 42A. ID (T=25°C): 54A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 18.5 ns. Td(on): 6.25 ns. Technology: 'Latest Trench Power MOSFET technology'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.8V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: Very Low RDS(on) at 10VGS. Drain-source protection : yes. G-S Protection: no

Cost): 16pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 172ns. Type of transistor: MOSFET. Id(imp): 15A. ID (T=100°C): 2.5A. ID (T=25°C): 3.9A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 18 ns. Td(on): 17 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. C(in): 273pF. Drain-source protection : yes. G-S Protection: no

C(in): 962pF. Cost): 98pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 332ns. Type of transistor: MOSFET. Id(imp): 27A. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 178W. On-resistance Rds On: 0.71 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 24 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.3V. Drain-source protection : yes. G-S Protection: no

C(in): 2850pF. Cost): 258pF. Channel type: N. Trr Diode (Min.): 19 ns. Type of transistor: MOSFET. Id(imp): 170A. ID (T=100°C): 51A. ID (T=25°C): 80A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 5.3m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 8 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerSO-8 ( DFN5X6 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.5V. Quantity per case: 1. Function: t=10sec, Idsm--16.5A/25°C, Idsm--13A/70°C. Drain-source protection : yes. G-S Protection: no

C(in): 3430pF. Cost): 1327pF. Channel type: N. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Id(imp): 340A. ID (T=100°C): 115A. ID (T=25°C): 150A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 1.9m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33.8 ns. Td(on): 7.5 ns. Technology: 'Latest Trench Power AlphaMOS technology'. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerSO-8 ( DFN5X6 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Idsm--54A/25°C, Idsm--43A/70°C. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: DFN8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: 7401. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -36A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.017 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 2060pF. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Function: Complementary Enhancement Mode FET. Marking on the case: P605. Number of terminals: 8. Pd (Power Dissipation, Max): 2.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.028 Ohms & 0.035 Ohms (VGS=10V)

Channel type: N-P. Function: Complementary Enhancement Mode FET. Number of terminals: 8. Pd (Power Dissipation, Max): 2.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.028 Ohms & 0.035 Ohms (VGS=10V)

C(in): 1100pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 19 ns. Type of transistor: MOSFET. Function: High efficiency power supply, secondary synchronus rectifier. Id(imp): 110A. ID (T=100°C): 36A. ID (T=25°C): 46A. Idss (max): 5uA. IDss (min): 1uA. Marking on the case: AOY2610E. Pd (Power Dissipation, Max): 59.5W. On-resistance Rds On: 7.7m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 22 ns. Td(on): 6.5 ns. Technology: Trench Power AlphaSGTTM technology. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1.4V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

C(in): 655pF. Cost): 145pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 95A. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: 40T03 GP. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. On-resistance Rds On: 25m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

C(in): 655pF. Cost): 145pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 95A. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: 40T03 GP. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. On-resistance Rds On: 25m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 mS. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V. Operating temperature: -55°C...+150°C. G-S Protection: no

C(in): 655pF. Cost): 145pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 95A. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: 40T03GS. Number of terminals: 3. Pd (Power Dissipation, Max): 31W. On-resistance Rds On: 25m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V. Operating temperature: -55°C...+150°C. G-S Protection: no

C(in): 990pF. Cost): 220pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Id(imp): 80A. ID (T=100°C): 15A. ID (T=25°C): 24A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 10 ns. Technology: 'Enhancement Mode Power MOSFET'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 35V. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V. Function: fast Switching, DC/DC Converter. Operating temperature: -55°C...+150°C. G-S Protection: no

Channel type: N-P. Marking on the case: 4501GM. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.050 Ohms (Q2)

Channel type: N-P. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-4L ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Quantity per case: 2. Number of terminals: 4. Note: ID(AV)--N--9A P--8A. Note: Rds-on 0.024 Ohms (N), 0.036 Ohms (P). Note: Vdss 30V (N), -30V (P)