Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.48$ | 0.48$ |
10 - 24 | 0.45$ | 0.45$ |
25 - 49 | 0.43$ | 0.43$ |
50 - 99 | 0.40$ | 0.40$ |
100 - 249 | 0.39$ | 0.39$ |
250 - 402 | 0.35$ | 0.35$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.48$ | 0.48$ |
10 - 24 | 0.45$ | 0.45$ |
25 - 49 | 0.43$ | 0.43$ |
50 - 99 | 0.40$ | 0.40$ |
100 - 249 | 0.39$ | 0.39$ |
250 - 402 | 0.35$ | 0.35$ |
AO3401A. C(in): 933pF. Cost): 108pF. Channel type: P. Trr Diode (Min.): 21 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 25A. ID (T=100°C): 3.8A. ID (T=25°C): 4.3A. Idss (max): 5uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) max.: 1.3V. Vgs(th) min.: 0.6V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.036 Ohms. Spec info: Operation gate voltage as low as 2.5V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 06:25.
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