Transistors

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Assembly/installation: PCB through-hole mounting. Technology: DIP-8. Housing: DIP. Quantity per case: 2. Note: 0.025 Ohms & 0.040 Ohms

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.025 Ohms & 0.040 Ohms

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: *SMD TO-252-4L*. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.028 Ohms & 0.042 Ohms

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.028 Ohms & 0.042 Ohms

C(in): 450pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 8.4A. ID (T=25°C): 10.4A. Idss: 10uA. Idss (max): 10.4A. Marking on the case: 4800C G M. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Power MOSFET'. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Function: fast Switching, DC/DC Converter. G-S Protection: no

C(in): 8440pF. Cost): 1775pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 160A. ID (T=100°C): 48A. ID (T=25°C): 48A. Idss (max): 200uA. IDss (min): 1uA. Marking on the case: 88N30W. Number of terminals: 3. Pd (Power Dissipation, Max): 312W. On-resistance Rds On: 48m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 50 ns. Technology: 'Enhancement-Mode Power MOSFET'. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Operating temperature: -55°C...+150°C. Drain-source protection : yes. G-S Protection: no

C(in): 1440pF. Cost): 160pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 43 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. On-resistance Rds On: 0.064 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Power MOSFET'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Operating temperature: -55°C...+150°C. Drain-source protection : yes. G-S Protection: no

Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 16A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Power MOSFET'. Housing: TO-220. Voltage Vds(max): 60V. Gate/source voltage Vgs: 25V. Operating temperature: -55°C...+150°C. G-S Protection: no

Channel type: N-P. Function: 2N-ch and 2P-ch POWER MOSFET. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 4. Spec info: Rds-on 0.033 Ohms / 0.055 Ohms

C(in): 1170pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. Id(imp): 150A. ID (T=100°C): 20A. ID (T=25°C): 32A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 9962GH. Number of terminals: 2. Pd (Power Dissipation, Max): 27.8W. On-resistance Rds On: 0.02 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 8 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. G-S Protection: no

Channel type: N. Function: MOS-N-FET. Number of terminals: 8. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-8. Quantity per case: 2. Spec info: 0.050R (50m Ohms)

C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. Id(imp): 90A. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 250uA. IDss (min): 1uA. Marking on the case: 9971GH. Number of terminals: 2. Pd (Power Dissipation, Max): 39W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. G-S Protection: NO. Id(imp): 80A. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 25uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.3W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220CFM. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

Channel type: N. Quantity per case: 2. Id(imp): 28A. ID (T=100°C): 4A. ID (T=25°C): 7A. Marking on the case: 9971GM. Number of terminals: 8. Pd (Power Dissipation, Max): 4W. On-resistance Rds On: 0.050R (50m Ohms). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Function: tf 5.5ns, td(on) 9.6ns, td(off) 30ns

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: td(on) 12ns. ID (T=25°C): 4A. Idss (max): 4A. Assembly/installation: surface-mounted component (SMD). Technology: 'Enhancement Mode MOSFET'. Housing: SOT-89. Housing (according to data sheet): SOT-89. Voltage Vds(max): 20V

Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Enhancement Mode DUAL MOSFET (N-and P-Channel)'. Housing: DIP. Housing (according to data sheet): DIP-8. Operating temperature: -55...+150°C. Quantity per case: 2. Note: Id--8A/30Ap & 6A/20Ap. Note: Rds-on 0.025 Ohms / 0.040 Ohms. Note: Vds 30V & 30V

C(in): 1685pF. Cost): 210pF. Channel type: N. Trr Diode (Min.): 55ms. Function: High frequency switch mode power supplies. Collector current: 56A. Ic(pulse): 65A. Ic(T=100°C): 27A. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 8 ns. Technology: POWER MOS 7® IGBT. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no

C(in): 4360pF. Cost): 895pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 280 ns. Type of transistor: MOSFET. Id(imp): 164A. ID (T=25°C): 41A. Idss (max): 1000uA. IDss (min): 250uA. Pd (Power Dissipation, Max): 378W. On-resistance Rds On: 0.10 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOS 7 FREDFET. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: fast switching, low leakage. Drain-source protection : yes. G-S Protection: no

C(in): 7400pF. Cost): 1000pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Id(imp): 176A. ID (T=25°C): 44A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 450W. On-resistance Rds On: 0.10 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 14 ns. Technology: Power MOSV. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v. Function: fast switching, low leakage. Drain-source protection : yes. G-S Protection: no

C(in): 2600pF. Cost): 270pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Id(imp): 48A. ID (T=25°C): 12A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 260W. On-resistance Rds On: 0.75 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 12 ns. Technology: Power MOSV. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v. Function: fast switching, low leakage. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-323. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 32. Collector-emitter voltage Uceo [V]: 5.5V. Collector current Ic [A], max.: 40mA. Cutoff frequency ft [MHz]: 2.4GHz. Maximum dissipation Ptot [W]: 0.2W. Component family: high frequency NPN transistor

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-343. Configuration: surface-mounted component (SMD). Number of terminals: 4. Manufacturer's marking: 5Fx. Drain-source voltage Uds [V]: 5V. Drain Current Id [A] @ 25°C: 0.1A. Gate breakdown voltage Ugs [V]: 0.37V. Maximum dissipation Ptot [W]: 0.27W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Quantity per case: 1. Note: TU

RoHS: no. Housing: PCB soldering. Housing: TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: B891F. Collector-emitter voltage Uceo [V]: 32V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Resistor B: no. BE resistor: PCB soldering. C(in): TO-18. Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Vcbo: 50V. Collector/emitter voltage Vceo: 45V. Vebo: 6V. BE diode: no. CE diode: no