AO3416

AO3416. C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 17.7 ns. Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 30A. ID (T=100°C): 5.2A. ID (T=25°C): 6.5A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 18M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51.7 ns. Td(on): 6.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Number of terminals: 3. Quantity per case: 1. Spec info: ESD protected. G-S Protection: yes. Quantity in stock updated on 07/01/2025, 21:25.