Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.32$ | 3.32$ |
5 - 9 | 3.16$ | 3.16$ |
10 - 24 | 2.99$ | 2.99$ |
25 - 49 | 2.83$ | 2.83$ |
50 - 99 | 2.76$ | 2.76$ |
100 - 126 | 2.69$ | 2.69$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.32$ | 3.32$ |
5 - 9 | 3.16$ | 3.16$ |
10 - 24 | 2.99$ | 2.99$ |
25 - 49 | 2.83$ | 2.83$ |
50 - 99 | 2.76$ | 2.76$ |
100 - 126 | 2.69$ | 2.69$ |
AO3407A. C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. ID (T=100°C): 3.5A. ID (T=25°C): 4.1A. Idss: 1uA. Idss (max): 4.1A. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.052 Ohms. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.