Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.00$ | 1.00$ |
5 - 9 | 0.95$ | 0.95$ |
10 - 24 | 0.90$ | 0.90$ |
25 - 49 | 0.85$ | 0.85$ |
50 - 99 | 0.83$ | 0.83$ |
100 - 249 | 0.81$ | 0.81$ |
250 - 343 | 0.77$ | 0.77$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.00$ | 1.00$ |
5 - 9 | 0.95$ | 0.95$ |
10 - 24 | 0.90$ | 0.90$ |
25 - 49 | 0.85$ | 0.85$ |
50 - 99 | 0.83$ | 0.83$ |
100 - 249 | 0.81$ | 0.81$ |
250 - 343 | 0.77$ | 0.77$ |
AO4427. C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 28 ns. Type of transistor: FET. Function: Switching or PWM applications. Id(imp): 60A. ID (T=100°C): 10.5A. ID (T=25°C): 12.5A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0094 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 1. G-S Protection: yes. Quantity in stock updated on 07/01/2025, 21:25.
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