Transistors

Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Collector current: 3A. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: complementary transistor (pair) 2SB772. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: M31/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Collector current Ic [A], max.: 7A. Maximum dissipation Ptot [W]: 70W

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 4000. Collector current: 2A. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. Spec info: TO-126. Housing: TO-126 (TO-225, SOT-32)

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Collector current: 0.02A. Pd (Power Dissipation, Max): 0.4W. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Function: NF

Cost): 50pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: AF output amplifier. Max hFE gain: 600. Minimum hFE gain: 340. Collector current: 5A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 20V. Vebo: 7V. BE diode: no. CE diode: no

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.6W

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-3P. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: J119. Drain-source voltage Uds [V]: -160V. Drain Current Id [A] @ 25°C: -8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1050pF. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 800pF. Cost): 270pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 20A. ID (T=25°C): 5A. Idss (max): 100uA. Number of terminals: 3. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS (F). Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: yes

C(in): 1040pF. Cost): 360pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: SWITCHING, POWER MOS FET. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 4 v. Drain-source protection : yes. G-S Protection: no

C(in): 800pF. Cost): 250pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 205 ns. Type of transistor: MOSFET. Function: 'Enhancement Mode Low Drain-Source On Resistance'. Id(imp): 20A. ID (T=25°C): 5A. Idss (max): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 35 ns. Technology: Silicon P Chanel Mos Fet. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. G-S Protection: yes

C(in): 450pF. Cost): 120pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching, IDP 18App/10us. Id(imp): 18A. ID (T=25°C): 4.5A. Idss (max): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 30 ns. Technology: silicon MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. G-S Protection: yes

C(in): 720pF. Cost): 150pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: integrated protection diode. Id(imp): 30A. ID (T=25°C): 12A. Idss (max): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 23W. On-resistance Rds On: 0.13 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 7 ns. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Technology: P-channel MOS Field Effect Transistor. G-S Protection: yes

C(in): 120pF. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: complementary transistor (pair) 2SK216. ID (T=25°C): 500mA. Idss (max): 500mA. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -40...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 15V. Drain-source protection : yes. G-S Protection: yes

Channel type: N. Quantity per case: 1. Type of transistor: FET. ID (T=25°C): 20mA. Idss: 2.5mA. Idss (max): 2.5mA. IDss (min): 2.5mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Function: HF amplification

C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 300uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 8.5 ns. Td(on): 4 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 300uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 40 ns. Technology: Field Effect Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Low Leakage Current Low Drain Source ON resistance. G-S Protection: no

Td(off): 100 ns. Td(on): 40 ns. Technology: Silicon N Channel Mos. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/emitter voltage VGE(th)max.: 3.5V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V. C(in): 1300pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=25°C): 8A. Idss (max): 300uA. Marking on the case: K1120. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.5 Ohms. Spec info: DC-DC Converter and Motor Drive Application. Weight: 4.6g. Assembly/installation: PCB through-hole mounting. G-S Protection: no

C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. ID (T=25°C): 20A. Idss (max): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.27 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 30A. Idss (max): 30A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.08 Ohms. Voltage Vds(max): 60V

C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=25°C): 8A. Idss (max): 300uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 40 ns. Technology: V-MOS-L. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V. G-S Protection: no

C(in): 1400pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Low Driving Power High Speed Switching. Id(imp): 23A. ID (T=25°C): 8A. Idss (max): 500uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 50 ns. Technology: V-MOS. Housing (according to data sheet): TO-3PF. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Housing: TO-3PF (SOT399, 2-16E3A). G-S Protection: no

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K1246. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.4 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 180 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1800pF. Cost): 500pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Function: High-Voltage Switching. Id(imp): 10A. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 100uA. Pd (Power Dissipation, Max): 240W. On-resistance Rds On: 4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Technology: MOSFET transistor. Housing: TO-3PN 13-16A1A. Operating temperature: -...+150°C. Voltage Vds(max): 1400V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 3.5V. Gate/source voltage (off) min.: 1.5V. Drain-source protection : yes. Germanium diode: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 15A. ID (T=25°C): 30A. Idss (max): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.028 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Spec info: Logic level compatible

C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 300uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V