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Semiconductors Transistors

2SK1358

2SK1358
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 9.09$ 9.09$
2 - 2 8.63$ 8.63$
3 - 4 8.18$ 8.18$
5 - 9 7.72$ 7.72$
10 - 16 7.54$ 7.54$
Quantity U.P
1 - 1 9.09$ 9.09$
2 - 2 8.63$ 8.63$
3 - 4 8.18$ 8.18$
5 - 9 7.72$ 7.72$
10 - 16 7.54$ 7.54$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 16
Set of 1

2SK1358. C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 300uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Quantity in stock updated on 27/12/2024, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 52
2SK2611

2SK2611

C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. F...
2SK2611
C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 100uA. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
2SK2611
C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 100uA. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
6.32$ VAT incl.
(6.32$ excl. VAT)
6.32$

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