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Semiconductors Transistors

2SD882

2SD882
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.95$ 0.95$
5 - 9 0.91$ 0.91$
10 - 24 0.86$ 0.86$
25 - 49 0.81$ 0.81$
50 - 97 0.79$ 0.79$
Quantity U.P
1 - 4 0.95$ 0.95$
5 - 9 0.91$ 0.91$
10 - 24 0.86$ 0.86$
25 - 49 0.81$ 0.81$
50 - 97 0.79$ 0.79$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 97
Set of 1

2SD882. Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Collector current: 3A. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: complementary transistor (pair) 2SB772. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 409
MJE243G

MJE243G

Collector current: 4A. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Q...
MJE243G
Collector current: 4A. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
MJE243G
Collector current: 4A. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 54
KSD882-Y

KSD882-Y

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Collector current: ...
KSD882-Y
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Spec info: SD882-Y
KSD882-Y
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Spec info: SD882-Y
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$

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Quantity in stock : 1
2SK1460

2SK1460

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID...
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Quantity in stock : 97
2SD882

2SD882

Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. M...
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ST13005A

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Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hF...
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SI4925DDY

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Quantity in stock : 70
BC109C

BC109C

Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general ...
BC109C
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Quantity in stock : 160
BYW56

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Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silico...
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Quantity in stock : 175
IRF3205

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Quantity in stock : 97
STP75NF75

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C(in): 3700pF. Cost): 730pF. Channel type: N. Trr Diode (Min.): 132 ns. Type of transistor: MOSFET. ...
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BTA16-600BW

BTA16-600BW

Function: 2500V insulation. Igt (max): 50mA. Igt (Type): 50mA. Ih (max): 50mA. IT(RSM) (TC=85°C): 1...
BTA16-600BW
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