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Semiconductors Transistors

2SK1170

2SK1170
Quantity excl. VAT VAT incl.
1 - 1 11.96$ 11.96$
2 - 2 11.36$ 11.36$
3 - 4 10.76$ 10.76$
5 - 9 10.16$ 10.16$
10 - 14 9.92$ 9.92$
15 - 19 9.69$ 9.69$
20+ 9.33$ 9.33$
Quantity U.P
1 - 1 11.96$ 11.96$
2 - 2 11.36$ 11.36$
3 - 4 10.76$ 10.76$
5 - 9 10.16$ 10.16$
10 - 14 9.92$ 9.92$
15 - 19 9.69$ 9.69$
20+ 9.33$ 9.33$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SK1170. C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. ID (T=25°C): 20A. Idss (max): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.27 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 106
IRFP460

IRFP460

C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type o...
IRFP460
C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 80A. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFP460
C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 80A. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
6.72$ VAT incl.
(6.72$ excl. VAT)
6.72$

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IRFP450

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TKR471M1CFBB

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FGH40N60SFDTU

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IRFP9240

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IRFP260N

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BU806

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IRFP250N

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