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2SK1217

2SK1217
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 24.76$ 24.76$
2 - 2 23.52$ 23.52$
3 - 4 22.28$ 22.28$
5 - 9 21.04$ 21.04$
10 - 14 20.55$ 20.55$
15 - 19 20.05$ 20.05$
20+ 19.31$ 19.31$
Quantity U.P
1 - 1 24.76$ 24.76$
2 - 2 23.52$ 23.52$
3 - 4 22.28$ 22.28$
5 - 9 21.04$ 21.04$
10 - 14 20.55$ 20.55$
15 - 19 20.05$ 20.05$
20+ 19.31$ 19.31$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SK1217. C(in): 1400pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Low Driving Power High Speed Switching. Id(imp): 23A. ID (T=25°C): 8A. Idss (max): 500uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 50 ns. Technology: V-MOS. Housing (according to data sheet): TO-3PF. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Housing: TO-3PF (SOT399, 2-16E3A). G-S Protection: no. Quantity in stock updated on 04/01/2025, 11:25.

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