Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.79$ | 2.79$ |
5 - 9 | 2.65$ | 2.65$ |
10 - 17 | 2.51$ | 2.51$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.79$ | 2.79$ |
5 - 9 | 2.65$ | 2.65$ |
10 - 17 | 2.51$ | 2.51$ |
2SJ512. C(in): 800pF. Cost): 250pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 205 ns. Type of transistor: MOSFET. Function: 'Enhancement Mode Low Drain-Source On Resistance'. Id(imp): 20A. ID (T=25°C): 5A. Idss (max): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 35 ns. Technology: Silicon P Chanel Mos Fet. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. G-S Protection: yes. Quantity in stock updated on 04/01/2025, 10:25.
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