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Semiconductors Transistors

2SK1118-PMC

2SK1118-PMC
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Quantity excl. VAT VAT incl.
1 - 4 2.95$ 2.95$
5 - 9 2.80$ 2.80$
10 - 16 2.65$ 2.65$
Quantity U.P
1 - 4 2.95$ 2.95$
5 - 9 2.80$ 2.80$
10 - 16 2.65$ 2.65$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 16
Set of 1

2SK1118-PMC. C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 300uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 40 ns. Technology: Field Effect Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Low Leakage Current Low Drain Source ON resistance. G-S Protection: no. Quantity in stock updated on 04/01/2025, 10:25.

Equivalent products :

Quantity in stock : 32
2SK2545

2SK2545

C(in): 1300pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100...
2SK2545
C(in): 1300pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 100uA. Marking on the case: K2545. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.9 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 45 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
2SK2545
C(in): 1300pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 100uA. Marking on the case: K2545. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.9 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 45 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
Set of 1
2.66$ VAT incl.
(2.66$ excl. VAT)
2.66$
Quantity in stock : 31
2SK2645

2SK2645

C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. F...
2SK2645
C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. ID (T=25°C): 9A. Idss (max): 100nA. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
2SK2645
C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. ID (T=25°C): 9A. Idss (max): 100nA. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
3.96$ VAT incl.
(3.96$ excl. VAT)
3.96$
Quantity in stock : 131
2SK1507

2SK1507

C(in): 1200pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type o...
2SK1507
C(in): 1200pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 500uA. IDss (min): 10uA. Marking on the case: K1507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.85 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 30 ns. Technology: F-II Series POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no
2SK1507
C(in): 1200pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 500uA. IDss (min): 10uA. Marking on the case: K1507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.85 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 30 ns. Technology: F-II Series POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.79$ VAT incl.
(1.79$ excl. VAT)
1.79$

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