2SJ584

Quantity	excl. VAT	VAT incl.
1 - 4	2.02$	2.02$
5 - 9	1.92$	1.92$
10 - 24	1.82$	1.82$
25 - 49	1.71$	1.71$
50 - 99	1.67$	1.67$
100 - 101	1.63$	1.63$

Quantity	U.P
1 - 4	2.02$	2.02$
5 - 9	1.92$	1.92$
10 - 24	1.82$	1.82$
25 - 49	1.71$	1.71$
50 - 99	1.67$	1.67$
100 - 101	1.63$	1.63$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 101

Set of 1

2SJ584. C(in): 450pF. Cost): 120pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching, IDP 18App/10us. Id(imp): 18A. ID (T=25°C): 4.5A. Idss (max): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 30 ns. Technology: silicon MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. G-S Protection: yes. Quantity in stock updated on 04/01/2025, 10:25.

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Delivery in 2-3 days, with postal tracking!