Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.30$ | 0.30$ |
10 - 24 | 0.29$ | 0.29$ |
25 - 49 | 0.27$ | 0.27$ |
50 - 98 | 0.26$ | 0.26$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.30$ | 0.30$ |
10 - 24 | 0.29$ | 0.29$ |
25 - 49 | 0.27$ | 0.27$ |
50 - 98 | 0.26$ | 0.26$ |
2SD965. Cost): 50pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: AF output amplifier. Max hFE gain: 600. Minimum hFE gain: 340. Collector current: 5A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 20V. Vebo: 7V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.
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