Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Collector current: 2A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/80V. Collector current Ic [A], max.: 800mA. Maximum dissipation Ptot [W]: 1W

Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Function: general purpose. Collector current: 0.7A. Note: hFE 120...240. Pd (Power Dissipation, Max): 0.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 25V

Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: MONITOR. Housing: TO-3PF (SOT399, 2-16E3A)

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 30W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D18/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 0.5W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD551. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 100W

Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 320. Minimum hFE gain: 20. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB631K. Housing: TO-126 (TO-225, SOT-32)

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.2W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/15V. Collector current Ic [A], max.: 700mA. Maximum dissipation Ptot [W]: 0.5W

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 120. Minimum hFE gain: 60. Collector current: 1A. Ic(pulse): 2A. Note: 9mm. Marking on the case: D667. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Epitaxial. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB647

Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Spec info: complementary transistor (pair) 2SB682

Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: audio power amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Collector current: 8A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB688. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. Collector current: 6A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Collector current: 0.7A. Pd (Power Dissipation, Max): 0.6W. Housing: TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 25V

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Maximum dissipation Ptot [W]: 25W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.25W

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector current: 6A. Note: B=1000. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF/SL. Collector current: 6A. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V

Quantity per case: 1. Semiconductor material: silicon. Collector current: 1A. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SB764. BE diode: no. CE diode: no

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD871. Collector-emitter voltage Uceo [V]: 1500V/600V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 50W

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat. Collector current: 3A. Pd (Power Dissipation, Max): 0.75W. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V