Transistors

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: D3. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.7A. Gate breakdown voltage Ugs [V]: -1.0V. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 71 ns. Ciss Gate Capacitance [pF]: 1020pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -7.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 1225pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: P. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 1.95A. ID (T=25°C): 2.45A. Idss (max): 5nA. IDss (min): 1nA. Pd (Power Dissipation, Max): 1nA. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: TSOP. Housing (according to data sheet): TSOP-6. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) min.: 0.45V. Number of terminals: 6. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Channel type: P. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. ID (T=25°C): 8.7A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 45ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. ID (T=25°C): 8.7A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 18 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss (max): 10A. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.013 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 1

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4410BDY. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 7.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0135 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 2000pF. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 50A. ID (T=100°C): 10.5A. ID (T=25°C): 13.5A. Idss (max): 13.5A. Marking on the case: 4420AP. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.008 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 1

Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 41ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 9.1A. ID (T=25°C): 11.4A. Idss (max): 5uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431BDY-T1-E3. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 1600pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431CDY-T1-GE3. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1006pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.6A. ID (T=25°C): 7A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=25°C): 8.8A. Idss (max): 8.8A. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 1

C(in): 12350pF. Cost): 2775pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 84 ns. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 70A. ID (T=100°C): 26A. ID (T=25°C): 32A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 7.8W. On-resistance Rds On: 17m Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 240 ns. Td(on): 38 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 12V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Quantity per case: 1. Spec info: Id--40...50A t=10s with FR4 board. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 40A. ID (T=100°C): 4.8A. ID (T=25°C): 6A. Idss (max): 20uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.026 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 12.5 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 80V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 40Ap. ID (T=100°C): 5.2A. ID (T=25°C): 6.2A. Idss (max): 20uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.026 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 12.5 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+175°C. Voltage Vds(max): 80V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 1.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--20App, td(on)--12&8nS, td(off)--23&21nS

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4532ADY-T1-E3. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.7A/-3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.053 Ohms/0.08 Ohms @ 4.9/-3.9A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 12 ns/8 ns. Switch-off delay tf[nsec.]: 23/21 ns. Ciss Gate Capacitance [pF]: 500pF. Maximum dissipation Ptot [W]: 1.13W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 340pF. Cost): 67pF. Channel type: N-P. Trr Diode (Min.): 30 ns. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--24&15App, td(on)--7.5&5.5nS, td(off)--14&17nS. Drain-source protection : no. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4532CDY-T1-E3. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 5.2A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms/0.14 Ohms @ 5.2/-3.4A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 11 ns/10 ns. Switch-off delay tf[nsec.]: 25/30 ns. Ciss Gate Capacitance [pF]: 305/340pF. Maximum dissipation Ptot [W]: 1.14W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--30&30App, td(on)--6&7nS, td(off)--30&40nS

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--20&20App, td(on)--6&13nS, td(off)--18&47nS

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4559EY. Drain-source voltage Uds [V]: 60V/-60V. Drain Current Id [A] @ 25°C: 4.5A/-3.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms/0.075 Ohms @ 4.5/-3.9A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 13 ns/8 ns. Switch-off delay tf[nsec.]: 36/12ns. Ciss Gate Capacitance [pF]: 1000pF. Maximum dissipation Ptot [W]: 2.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C