Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.87$ | 0.87$ |
5 - 9 | 0.82$ | 0.82$ |
10 - 24 | 0.78$ | 0.78$ |
25 - 49 | 0.74$ | 0.74$ |
50 - 99 | 0.72$ | 0.72$ |
100 - 249 | 0.56$ | 0.56$ |
250 - 2000 | 0.53$ | 0.53$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.87$ | 0.87$ |
5 - 9 | 0.82$ | 0.82$ |
10 - 24 | 0.78$ | 0.78$ |
25 - 49 | 0.74$ | 0.74$ |
50 - 99 | 0.72$ | 0.72$ |
100 - 249 | 0.56$ | 0.56$ |
250 - 2000 | 0.53$ | 0.53$ |
SI2319CDS-T1-GE3. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 03:25.
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