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SI2319CDS-T1-GE3

SI2319CDS-T1-GE3
Quantity excl. VAT VAT incl.
1 - 4 0.87$ 0.87$
5 - 9 0.82$ 0.82$
10 - 24 0.78$ 0.78$
25 - 49 0.74$ 0.74$
50 - 99 0.72$ 0.72$
100 - 249 0.56$ 0.56$
250 - 2000 0.53$ 0.53$
Quantity U.P
1 - 4 0.87$ 0.87$
5 - 9 0.82$ 0.82$
10 - 24 0.78$ 0.78$
25 - 49 0.74$ 0.74$
50 - 99 0.72$ 0.72$
100 - 249 0.56$ 0.56$
250 - 2000 0.53$ 0.53$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2000
Set of 1

SI2319CDS-T1-GE3. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 03:25.

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