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SI2333DDS-T1-GE3

SI2333DDS-T1-GE3
Quantity excl. VAT VAT incl.
1 - 4 1.63$ 1.63$
5 - 9 1.55$ 1.55$
10 - 24 1.47$ 1.47$
25 - 49 1.39$ 1.39$
50 - 99 1.36$ 1.36$
100 - 249 1.32$ 1.32$
250 - 8803 1.26$ 1.26$
Quantity U.P
1 - 4 1.63$ 1.63$
5 - 9 1.55$ 1.55$
10 - 24 1.47$ 1.47$
25 - 49 1.39$ 1.39$
50 - 99 1.36$ 1.36$
100 - 249 1.32$ 1.32$
250 - 8803 1.26$ 1.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 8803
Set of 1

SI2333DDS-T1-GE3. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 02:25.

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