Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.63$ | 1.63$ |
5 - 9 | 1.55$ | 1.55$ |
10 - 24 | 1.47$ | 1.47$ |
25 - 49 | 1.39$ | 1.39$ |
50 - 99 | 1.36$ | 1.36$ |
100 - 249 | 1.32$ | 1.32$ |
250 - 8803 | 1.26$ | 1.26$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.63$ | 1.63$ |
5 - 9 | 1.55$ | 1.55$ |
10 - 24 | 1.47$ | 1.47$ |
25 - 49 | 1.39$ | 1.39$ |
50 - 99 | 1.36$ | 1.36$ |
100 - 249 | 1.32$ | 1.32$ |
250 - 8803 | 1.26$ | 1.26$ |
SI2333DDS-T1-GE3. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 02:25.
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