Transistors

Cost): 9pF. Semiconductor material: silicon. Collector current: 8A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247F. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 35pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Collector current: 15A. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) SAP15P. BE diode: no. CE diode: no

Cost): 35pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Collector current: 15A. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) SAP15P. BE diode: no. CE diode: no

Function: N MOSFET transistor. ID (T=25°C): 20A. Idss (max): 20A. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-247. Housing (according to data sheet): TO-247. Quantity per case: 1

Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.3A. ID (T=25°C): 4.4A. Idss (max): 4.4A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Quantity per case: 1

Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=25°C): 3A. Idss (max): 3A. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 1.5 Ohms. Technology: V-MOS (F). Voltage Vds(max): 200V. Quantity per case: 1

Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 2.6A. ID (T=25°C): 3.4A. Idss (max): 3.4A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 1.3 Ohms. Technology: V-MOS TO220F. Voltage Vds(max): 250V. Quantity per case: 1. Note: On 13ns, Off 40ns

C(in): 1970pF. Cost): 310pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 50 ns. Function: High Speed ​​IGBT. Collector current: 48A. Ic(pulse): 90A. Ic(T=100°C): 30A. Marking on the case: G30N60RUFD. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 30 ns. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Spec info: Ic 48A @ 25°C, 30A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SGH80N60UF. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 80A. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 130 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 195W. Maximum collector current (A): 220A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 550pF. Cost): 62pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Collector current: 20A. Ic(pulse): 40A. Ic(T=100°C): 10.6A. Marking on the case: G10N60A. Number of terminals: 3. Pd (Power Dissipation, Max): 92W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 178 ns. Td(on): 28 ns. Technology: Fast IGBT in NPT technology. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Function: Motor controls, Inverter. CE diode: no. Germanium diode: no

RoHS: yes. C(in): 1250pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 3. Collector current: 30A. Ic(pulse): 52A. Ic(T=100°C): 15A. Marking on the case: G15N120. Number of terminals: 3. Pd (Power Dissipation, Max): 198W. Assembly/installation: PCB through-hole mounting. Td(off): 580 ns. Td(on): 18 ns. Technology: Fast IGBT in NPT technology. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.5V. Maximum saturation voltage VCE(sat): 3.6V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Function: Motor controls, Inverter, SMPS. CE diode: no. Germanium diode: no

RoHS: yes. C(in): 1600pF. Cost): 150pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 3. Collector current: 41A. Ic(pulse): 112A. Ic(T=100°C): 30A. Marking on the case: G30N60. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. Assembly/installation: PCB through-hole mounting. Td(off): 291 ns. Td(on): 44 ns. Technology: Fast IGBT in NPT technology. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Function: Motor controls, Inverter. CE diode: no. Germanium diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G30N60HS. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 122 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 250W. Maximum collector current (A): 112A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Cost): 8pF. Semiconductor material: silicon. Collector current: 15A. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 850V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. BE diode: no. CE diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SGW25N120. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 46A. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 990 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 313W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G30N60. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 53 ns. Switch-off delay tf[nsec.]: 389 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 250W. Maximum collector current (A): 112A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G30N60HS. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 122 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 250W. Maximum collector current (A): 112A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): plastic tube. Assembly/installation: PCB through-hole mounting. Td(off): 106 ns. Td(on): 16 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P4. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 2.2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 235pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L6. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.057 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 305pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N7. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.138 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L8. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.192 Ohms @ 1.7A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 1.66W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N9. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 210pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M5. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -0.9V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 715pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C