Transistors

C(in): 2930pF. Cost): 1150pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 380A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 2N03L04. Pd (Power Dissipation, Max): 188W. On-resistance Rds On: 5M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 13 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Number of terminals: 3. Quantity per case: 1. Spec info: Enhancement mode, Logic Level. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-251AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFD14N05L. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F14N05. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 850pF. Cost): 170pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: diode. ID (T=25°C): 12A. Idss: 1uA. Idss (max): 12A. Marking on the case: F3055L. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 10 ns. Technology: 'Enhancement-Mode Power MOSFET'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 60V. Quantity per case: 1. Function: logic level control, ESD protection

Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 125us. Type of transistor: MOSFET. Id(imp): 20A. ID (T=100°C): 6A. ID (T=25°C): 8A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: D8P05. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET MegaFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Spec info: ID pulse 20A. G-S Protection: no

C(in): 900pF. Cost): 325pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 30A. ID (T=100°C): 10A. ID (T=25°C): 12A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: F12N10L. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 15 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+155°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Technology: MegaFET process, Power MOSFET. Spec info: N-Channel Logic Level Power MOSFET. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: MegaFET. ID (T=25°C): 12A. Idss (max): 12A. Pd (Power Dissipation, Max): 53W. On-resistance Rds On: 0.15 Ohms. Assembly/installation: PCB through-hole mounting. Technology: 'Enhancement-Mode Power MOSFET'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. Quantity per case: 1

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP3055LE. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.107 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP50N06. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 37 ns. Ciss Gate Capacitance [pF]: 2020pF. Maximum dissipation Ptot [W]: 131W. On-resistance Rds On: 0.022 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 37 ns. Td(on): 12 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Housing (JEDEC standard): 50

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP70N06. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 70A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 2250pF. Maximum dissipation Ptot [W]: 150W. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 10 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Housing (JEDEC standard): 50. Technology: MegaFET process, Power MOSFET. Spec info: Temperature Compensated PSPICE® Model

Channel type: N. Trr Diode (Min.): 23 ns. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Collector/emitter voltage Vceo: 330V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.1us. CE diode: yes. Germanium diode: no

Channel type: N. Trr Diode (Min.): 23 ns. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 330V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.06us. CE diode: yes

C(in): 1200pF. Cost): 80pF. Channel type: N. Trr Diode (Min.): 23 ns. Compatibility: Samsung PS42C450B1WXXU. Function: High Speed ​​Power Switching. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 300V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.06us. CE diode: yes. Germanium diode: no

Channel type: N. Conditioning: plastic tube. Type of transistor: MOSFET. ID (T=25°C): 20A. Idss (max): 20A. Pd (Power Dissipation, Max): 178W. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Power MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30

Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=25°C): 40A. Idss (max): 40A. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Technology: N-channel MOSFET transistor. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Quantity per case: 1. Function: Trr 450ns, td(on) 52ns, td(off) 180ns

C(in): 85pF. Cost): 40pF. Channel type: N. Function: IGBT. Collector current: 30A. Ic(pulse): 250A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 40 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Collector/emitter voltage Vceo: 360V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. Spec info: 150ns, 30W, 40A. CE diode: no. Germanium diode: no

C(in): 1250pF. Cost): 40pF. Channel type: P. Collector current: 40A. Ic(pulse): 200A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Collector/emitter voltage Vceo: 630V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. Spec info: Panasonic--TX-P50VT20EA. CE diode: no. Germanium diode: no

C(in): 25pF. Cost): 10pF. Channel type: N. Type of transistor: MOSFET. Function: Interface and switching. Id(imp): 0.8A. ID (T=25°C): 115mA. Idss (max): 115mA. Marking on the case: RKM. Pd (Power Dissipation, Max): 0.2W. On-resistance Rds On: 7.5 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 12 ns. Technology: Silicon N-channel MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Operating temperature: -...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

Cost): 100pF. Semiconductor material: silicon. Function: DTR.. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Spec info: screen printing/CMS code XJ

C(in): 780pF. Cost): 180pF. Channel type: P. Conditioning: roll. Drain-source protection : diode. Type of transistor: MOSFET. Function: DC-DC voltage converter. Id(imp): 14A. ID (T=25°C): 3.5A. Idss (max): 1uA. IDss (min): 1uA. Marking on the case: TM. Temperature: +150°C. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 65m Ohms. RoHS: yes. Pitch: 2.9x1.6mm. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 15 ns. Technology: Power MOSFET. Housing: TSOP. Housing (according to data sheet): TSMT6. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 6. Quantity per case: 1. Conditioning unit: 3000. G-S Protection: yes

Channel type: N. Type of transistor: MOSFET. Id(imp): 10A. ID (T=25°C): 2.5A. Idss (max): 2.5A. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 0.074 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: N-Ch MOS FET. Housing (according to data sheet): TSMT3. Voltage Vds(max): 30 v. Quantity per case: 1. Note: screen printing/SMD code QY. Function: power switching, DC/DC converters

C(in): 1830pF. Cost): 410pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 35A. ID (T=25°C): 9.5A. Idss (max): 1uA. Marking on the case: TB. Number of terminals: 8. Temperature: +150°C. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 78 ns. Td(on): 20 ns. Technology: 4V Drive N-ch MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 45V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. Function: power switching, DC/DC converters, inverters. Drain-source protection : yes. G-S Protection: yes

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 10A. Idss (max): 10A. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 0.0125 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: 4V Drive N-ch MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 1

RoHS: yes. Housing: PCB soldering. Housing: ITO-218. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: S2000N. Collector-emitter voltage Uceo [V]: 1.5 kV. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 50W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Voltage VCEO: 1500V. Collector current: 8A. Power: 50W. Built-in diode: yes. Housing: TO-247-T