SI4532CDY-T1-GE3

Quantity	excl. VAT	VAT incl.
1 - 4	1.44$	1.44$
5 - 9	1.37$	1.37$
10 - 24	1.30$	1.30$
25 - 49	1.23$	1.23$
50 - 99	1.20$	1.20$
100 - 249	0.77$	0.77$
250 - 1338	0.74$	0.74$

Quantity	U.P
1 - 4	1.44$	1.44$
5 - 9	1.37$	1.37$
10 - 24	1.30$	1.30$
25 - 49	1.23$	1.23$
50 - 99	1.20$	1.20$
100 - 249	0.77$	0.77$
250 - 1338	0.74$	0.74$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1338

Set of 1

SI4532CDY-T1-GE3. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4532CDY-T1-E3. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 5.2A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms/0.14 Ohms @ 5.2/-3.4A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 11 ns/10 ns. Switch-off delay tf[nsec.]: 25/30 ns. Ciss Gate Capacitance [pF]: 305/340pF. Maximum dissipation Ptot [W]: 1.14W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!