SI4435BDY

Quantity	excl. VAT	VAT incl.
1 - 4	0.76$	0.76$
5 - 9	0.72$	0.72$
10 - 24	0.68$	0.68$
25 - 49	0.65$	0.65$
50 - 99	0.63$	0.63$
100 - 249	0.62$	0.62$
250 - 2093	0.59$	0.59$

Quantity	U.P
1 - 4	0.76$	0.76$
5 - 9	0.72$	0.72$
10 - 24	0.68$	0.68$
25 - 49	0.65$	0.65$
50 - 99	0.63$	0.63$
100 - 249	0.62$	0.62$
250 - 2093	0.59$	0.59$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 2093

Set of 1

SI4435BDY. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.6A. ID (T=25°C): 7A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!