Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.37$ | 0.37$ |
10 - 24 | 0.35$ | 0.35$ |
25 - 49 | 0.33$ | 0.33$ |
50 - 99 | 0.31$ | 0.31$ |
100 - 249 | 0.30$ | 0.30$ |
250 - 499 | 0.30$ | 0.30$ |
500 - 2713 | 0.28$ | 0.28$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.37$ | 0.37$ |
10 - 24 | 0.35$ | 0.35$ |
25 - 49 | 0.33$ | 0.33$ |
50 - 99 | 0.31$ | 0.31$ |
100 - 249 | 0.30$ | 0.30$ |
250 - 499 | 0.30$ | 0.30$ |
500 - 2713 | 0.28$ | 0.28$ |
SI3441BD. Channel type: P. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 1.95A. ID (T=25°C): 2.45A. Idss (max): 5nA. IDss (min): 1nA. Pd (Power Dissipation, Max): 1nA. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Housing: TSOP. Housing (according to data sheet): TSOP-6. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) min.: 0.45V. Number of terminals: 6. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.
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