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SI4431BDY-T1-E3

SI4431BDY-T1-E3
Quantity excl. VAT VAT incl.
1 - 4 1.93$ 1.93$
5 - 9 1.83$ 1.83$
10 - 24 1.74$ 1.74$
25 - 49 1.64$ 1.64$
50 - 99 1.60$ 1.60$
100 - 249 1.15$ 1.15$
250 - 19628 1.09$ 1.09$
Quantity U.P
1 - 4 1.93$ 1.93$
5 - 9 1.83$ 1.83$
10 - 24 1.74$ 1.74$
25 - 49 1.64$ 1.64$
50 - 99 1.60$ 1.60$
100 - 249 1.15$ 1.15$
250 - 19628 1.09$ 1.09$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 19628
Set of 1

SI4431BDY-T1-E3. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431BDY-T1-E3. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 1600pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 02:25.

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