Transistors

Channel type: N. Type of transistor: MOSFET. Id(imp): 108A. ID (T=100°C): 38A. ID (T=25°C): 53A. Idss (max): 53A. Marking on the case: 4744N. Number of terminals: 8. Pd (Power Dissipation, Max): 47W. On-resistance Rds On: 7.6m Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Function: ID pulse 108A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4744N

Channel type: N. Type of transistor: MOSFET. Id(imp): 288A. ID (T=100°C): 138A. ID (T=25°C): 191A. Idss (max): 191A. Marking on the case: 4833N. Number of terminals: 8. Pd (Power Dissipation, Max): 114W. On-resistance Rds On: 1.3M Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Function: ID pulse 288A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4833N

Channel type: N. Type of transistor: MOSFET. Id(imp): 208A. ID (T=100°C): 75A. ID (T=25°C): 104A. Idss (max): 104A. Marking on the case: 4835N. Number of terminals: 8. Pd (Power Dissipation, Max): 63W. On-resistance Rds On: 2.9m Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Function: ID pulse 208A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4835N

Cost): 135pF. Quantity per case: 1. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. Function: Made for Grundig. Collector current: 8A. Pd (Power Dissipation, Max): 34W. Assembly/installation: PCB through-hole mounting. Housing: SOT-199. Housing (according to data sheet): SOT-199. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no

Function: 27.5 & 34m Ohms). Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2

C(in): 790pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 40A. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss: 1uA. Idss (max): 10A. Pd (Power Dissipation, Max): 32W. On-resistance Rds On: 0.03 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.8 ns. Td(on): 2.2 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 40V. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

Channel type: N-P. Function: 28 & 65m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P2N2222A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

C(in): 860pF. Cost): 450pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=25°C): 30A. Idss: 0.1uA. Idss (max): 30A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 16 ns. Technology: Field Effect Transistor. Housing: TO-220. Housing (according to data sheet): TO-220AB. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.014 Ohms. G-S Protection: no

C(in): 2780pF. Cost): 641pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 34 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=25°C): 50A. Idss: 50uA. Idss (max): 50A. Pd (Power Dissipation, Max): 59.5W. On-resistance Rds On: 5.1M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 8 ns. Technology: Field Effect Transistor. Housing (according to data sheet): TO-263 (D2PAK). Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1200pF. Cost): 600pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 150A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss: 25uA. Idss (max): 50A. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 15m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 6 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 690pF. Cost): 310pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 32A. ID (T=100°C): 6A. ID (T=25°C): 8A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19.8 ns. Td(on): 6.7 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 170A. ID (T=100°C): 50A. ID (T=25°C): 75A. Idss: 25uA. Idss (max): 75A. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 5M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 7 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Max hFE gain: 500. Minimum hFE gain: 75. Collector current: 6.2A. Ic(pulse): 15A. Note: complementary transistor (pair) PBSS4041PX. Marking on the case: 6F. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: surface-mounted component (SMD). Tf (type): 220 ns. Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 35mV. Maximum saturation voltage VCE(sat): 320mV. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code 6F. BE diode: no. CE diode: no

Cost): 85pF. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Max hFE gain: 300. Minimum hFE gain: 80. Collector current: 5A. Ic(pulse): 15A. Note: PBSS4041NX. Marking on the case: 6g. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: surface-mounted component (SMD). Tf (type): 75 ns. Housing: SOT-89. Housing (according to data sheet): SOT89 (SC-62). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 60mV. Maximum saturation voltage VCE(sat): 300mV. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code 6G. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 80. Collector current: 100mA. Ic(pulse): 100mA. Marking on the case: *08. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Spec info: screen printing/SMD code P08/T08

Semiconductor material: silicon. Function: NPN switching transistor. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 15V. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Spec info: 130.41594. BE diode: no. CE diode: no

C(in): 920pF. Cost): 260pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: Field effect power transistor. Logic level control. Id(imp): 180A. ID (T=100°C): 30A. ID (T=25°C): 45A. Idss (max): 10uA. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 86W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 78 ns. Td(on): 6 ns. Technology: TrenchMOS transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Operating temperature: -55...+175°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: Field effect power transistor. Logic level control. Id(imp): 180A. ID (T=25°C): 45A. Idss (max): 45A. Pd (Power Dissipation, Max): 86W. On-resistance Rds On: 0.016 Ohms. Assembly/installation: PCB through-hole mounting. Technology: TrenchMOS transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 25V. Quantity per case: 1

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 6.2A. ID (T=25°C): 8.7A. Idss (max): 8.7A. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.4 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS SOT78. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V

Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: High Speed ​​Switching. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 15V. Collector/emitter voltage Vceo: 40V. Spec info: screen printing/SMD code P1J, T1J. BE diode: no. CE diode: yes

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.6A. Ic(pulse): 0.8A. Marking on the case: p2X, t2X, W2X. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. Spec info: screen printing/SMD code P2X, T2X, W2X, complementary transistor (pair) PMBT4401. BE diode: no. CE diode: no

Cost): 29pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Ic(pulse): 800mA. Marking on the case: *T2, P2T, T2T, W2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 350 ns. Tf(min): 40 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: screen printing/SMD code P2T, T2T, W2T, complementary transistor (pair) PMBT4401. BE diode: no. CE diode: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: PMV213SN. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 5.5 ns. Switch-off delay tf[nsec.]: 9.5 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C