Transistors

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NT2955G. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ -6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 750pF. Maximum dissipation Ptot [W]: 55W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Id(imp): 36A. ID (T=25°C): 12A. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: NT2955. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Function: ID pulse 36A/10ms. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Id(imp): 45A. ID (T=25°C): 12A. Idss (max): 12A. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.084 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Function: ID pulse 45A/10us. Quantity per case: 1. Note: screen printing/SMD code 55094G

Channel type: N. Type of transistor: MOSFET. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 29W. On-resistance Rds On: 0.122 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Function: ID pulse 27A/10us. Quantity per case: 1. Note: screen printing/SMD code 3150G

Channel type: N. Type of transistor: MOSFET. Id(imp): 45A. ID (T=25°C): 12A. Idss (max): 12A. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.089 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. Note: 55L104G. Function: logic level, ID pulse 45A/10us. Quantity per case: 1

C(in): 316pF. Cost): 105pF. Channel type: N. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Id(imp): 45A. ID (T=25°C): 12A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.089 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 9.2 ns. Technology: Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: logic level, ID pulse 45A/10us. Quantity per case: 1. Note: screen printing/SMD code 55L104G. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 55L104G. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.104 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 4490pF. Cost): 952pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 34 ns. Type of transistor: MOSFET. Id(imp): 230A. ID (T=100°C): 96A. ID (T=25°C): 124A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 4804NG. Pd (Power Dissipation, Max): 107W. On-resistance Rds On: 3.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 18 ns. Technology: Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.5V. Number of terminals: 2. Quantity per case: 1. Note: screen printing/SMD code 4804NG. Spec info: ID pulse 230A. G-S Protection: no

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no

C(in): 510pF. Cost): 200pF. Channel type: N. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Id(imp): 20A. ID (T=25°C): 5.1A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: 446. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 9 ns. Technology: Power MOSFET. Housing: TSOP. Housing (according to data sheet): TSOP-6. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 12V. Vgs(th) min.: 0.6V. Number of terminals: 6. Function: Lithium Ion Battery Applications, Notebook PC. Quantity per case: 1. Conditioning unit: 3000. On-resistance Rds On: 0.036 Ohms. Spec info: Gate control by logic level. G-S Protection: no

C(in): 4416pF. Cost): 296pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Id(imp): 472A. ID (T=100°C): 83A. ID (T=25°C): 118A. Idss (max): 250uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 503W. On-resistance Rds On: 0.02 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 40 ns. Housing: TO-247. Housing (according to data sheet): TO-247-3L, CASE 340CX. Operating temperature: -55...+175°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 19V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Technology: MOSFET – SiC Power, Single N-Channel. Function: UPS, DC/DC Converter, Boost Inverter. Spec info: IDSC--854A, TA=25°C, tp=10us, RG=4.7ohm. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Id(imp): 108A. ID (T=100°C): 38A. ID (T=25°C): 53A. Idss (max): 53A. Marking on the case: 4744N. Number of terminals: 8. Pd (Power Dissipation, Max): 47W. On-resistance Rds On: 7.6m Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Function: ID pulse 108A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4744N

Channel type: N. Type of transistor: MOSFET. Id(imp): 288A. ID (T=100°C): 138A. ID (T=25°C): 191A. Idss (max): 191A. Marking on the case: 4833N. Number of terminals: 8. Pd (Power Dissipation, Max): 114W. On-resistance Rds On: 1.3M Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Function: ID pulse 288A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4833N

Channel type: N. Type of transistor: MOSFET. Id(imp): 208A. ID (T=100°C): 75A. ID (T=25°C): 104A. Idss (max): 104A. Marking on the case: 4835N. Number of terminals: 8. Pd (Power Dissipation, Max): 63W. On-resistance Rds On: 2.9m Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Function: ID pulse 208A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4835N

Cost): 135pF. Quantity per case: 1. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. Function: Made for Grundig. Collector current: 8A. Pd (Power Dissipation, Max): 34W. Assembly/installation: PCB through-hole mounting. Housing: SOT-199. Housing (according to data sheet): SOT-199. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no

Function: 27.5 & 34m Ohms). Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2

C(in): 790pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 40A. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss: 1uA. Idss (max): 10A. Pd (Power Dissipation, Max): 32W. On-resistance Rds On: 0.03 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.8 ns. Td(on): 2.2 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 40V. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

Channel type: N-P. Function: 28 & 65m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P2N2222A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

C(in): 860pF. Cost): 450pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=25°C): 30A. Idss: 0.1uA. Idss (max): 30A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 16 ns. Technology: Field Effect Transistor. Housing: TO-220. Housing (according to data sheet): TO-220AB. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.014 Ohms. G-S Protection: no

C(in): 2780pF. Cost): 641pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 34 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=25°C): 50A. Idss: 50uA. Idss (max): 50A. Pd (Power Dissipation, Max): 59.5W. On-resistance Rds On: 5.1M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 8 ns. Technology: Field Effect Transistor. Housing (according to data sheet): TO-263 (D2PAK). Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1200pF. Cost): 600pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 150A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss: 25uA. Idss (max): 50A. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 15m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 6 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 690pF. Cost): 310pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 32A. ID (T=100°C): 6A. ID (T=25°C): 8A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19.8 ns. Td(on): 6.7 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no