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RFP12N10L

RFP12N10L
Quantity excl. VAT VAT incl.
1 - 4 1.52$ 1.52$
5 - 9 1.45$ 1.45$
10 - 24 1.37$ 1.37$
25 - 49 1.29$ 1.29$
50 - 70 1.26$ 1.26$
Quantity U.P
1 - 4 1.52$ 1.52$
5 - 9 1.45$ 1.45$
10 - 24 1.37$ 1.37$
25 - 49 1.29$ 1.29$
50 - 70 1.26$ 1.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 70
Set of 1

RFP12N10L. C(in): 900pF. Cost): 325pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 30A. ID (T=100°C): 10A. ID (T=25°C): 12A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: F12N10L. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 15 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+155°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Technology: MegaFET process, Power MOSFET. Spec info: N-Channel Logic Level Power MOSFET. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/12/2024, 18:25.

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