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RFD8P05SM

RFD8P05SM
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.25$ 2.25$
5 - 9 2.13$ 2.13$
10 - 24 2.02$ 2.02$
25 - 49 1.91$ 1.91$
50 - 99 1.86$ 1.86$
100 - 146 1.75$ 1.75$
Quantity U.P
1 - 4 2.25$ 2.25$
5 - 9 2.13$ 2.13$
10 - 24 2.02$ 2.02$
25 - 49 1.91$ 1.91$
50 - 99 1.86$ 1.86$
100 - 146 1.75$ 1.75$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 146
Set of 1

RFD8P05SM. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 125us. Type of transistor: MOSFET. Id(imp): 20A. ID (T=100°C): 6A. ID (T=25°C): 8A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: D8P05. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET MegaFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Spec info: ID pulse 20A. G-S Protection: no. Quantity in stock updated on 25/12/2024, 18:25.

Equivalent products :

Quantity in stock : 92
SPD08P06P

SPD08P06P

C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60us...
SPD08P06P
C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60us. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 6.2A. ID (T=25°C): 8.8A. Idss (max): 10uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Spec info: ID pulse 35.2A. G-S Protection: no
SPD08P06P
C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60us. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 6.2A. ID (T=25°C): 8.8A. Idss (max): 10uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Spec info: ID pulse 35.2A. G-S Protection: no
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$

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