RJP30E4

Quantity	excl. VAT	VAT incl.
1 - 1	6.82$	6.82$
2 - 2	6.48$	6.48$
3 - 4	6.14$	6.14$
5 - 7	5.80$	5.80$

Quantity	U.P
1 - 1	6.82$	6.82$
2 - 2	6.48$	6.48$
3 - 4	6.14$	6.14$
5 - 7	5.80$	5.80$

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Quantity in stock : 7

Set of 1

RJP30E4. C(in): 85pF. Cost): 40pF. Channel type: N. Function: IGBT. Collector current: 30A. Ic(pulse): 250A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 40 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Collector/emitter voltage Vceo: 360V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. Spec info: 150ns, 30W, 40A. CE diode: no. Germanium diode: no. Quantity in stock updated on 25/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!