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Semiconductors Transistors

Q67042-S4113

Q67042-S4113
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Quantity excl. VAT VAT incl.
1 - 1 7.11$ 7.11$
2 - 2 6.75$ 6.75$
3 - 4 6.40$ 6.40$
5 - 6 6.04$ 6.04$
Quantity U.P
1 - 1 7.11$ 7.11$
2 - 2 6.75$ 6.75$
3 - 4 6.40$ 6.40$
5 - 6 6.04$ 6.04$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 6
Set of 1

Q67042-S4113. C(in): 2930pF. Cost): 1150pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 380A. ID (T=25°C): 80A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 2N03L04. Pd (Power Dissipation, Max): 188W. On-resistance Rds On: 5M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 13 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Number of terminals: 3. Quantity per case: 1. Spec info: Enhancement mode, Logic Level. G-S Protection: no. Quantity in stock updated on 27/12/2024, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 89
IRLB8743PBF

IRLB8743PBF

C(in): 5110pF. Cost): 960pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of...
IRLB8743PBF
C(in): 5110pF. Cost): 960pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 100uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 2.5M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: High Frequency Synchronous. Drain-source protection : yes. G-S Protection: no
IRLB8743PBF
C(in): 5110pF. Cost): 960pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 100uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 2.5M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: High Frequency Synchronous. Drain-source protection : yes. G-S Protection: no
Set of 1
1.68$ VAT incl.
(1.68$ excl. VAT)
1.68$
Quantity in stock : 1313
IRLB8748PBF

IRLB8748PBF

C(in): 5110pF. Cost): 960pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
IRLB8748PBF
C(in): 5110pF. Cost): 960pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 2.5M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. G-S Protection: no
IRLB8748PBF
C(in): 5110pF. Cost): 960pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 2.5M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. G-S Protection: no
Set of 1
1.22$ VAT incl.
(1.22$ excl. VAT)
1.22$
Quantity in stock : 14
STP80NF55-08

STP80NF55-08

C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
STP80NF55-08
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
STP80NF55-08
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
4.15$ VAT incl.
(4.15$ excl. VAT)
4.15$
Quantity in stock : 99
STP80NF06

STP80NF06

C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
STP80NF06
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
STP80NF06
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
2.61$ VAT incl.
(2.61$ excl. VAT)
2.61$

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FQP13N10

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