Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.63$ | 1.63$ |
5 - 9 | 1.55$ | 1.55$ |
10 - 12 | 1.47$ | 1.47$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.63$ | 1.63$ |
5 - 9 | 1.55$ | 1.55$ |
10 - 12 | 1.47$ | 1.47$ |
RFD3055LESM. C(in): 850pF. Cost): 170pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: diode. ID (T=25°C): 12A. Idss: 1uA. Idss (max): 12A. Marking on the case: F3055L. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 10 ns. Technology: 'Enhancement-Mode Power MOSFET'. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 60V. Quantity per case: 1. Function: logic level control, ESD protection. Quantity in stock updated on 27/12/2024, 19:25.
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