RJH30H2DPK-M0

Quantity	excl. VAT	VAT incl.
1 - 1	14.51$	14.51$
2 - 2	13.78$	13.78$
3 - 4	13.05$	13.05$
5 - 9	12.33$	12.33$
10 - 14	12.04$	12.04$
15 - 19	11.75$	11.75$
20 - 48	11.31$	11.31$

Quantity	U.P
1 - 1	14.51$	14.51$
2 - 2	13.78$	13.78$
3 - 4	13.05$	13.05$
5 - 9	12.33$	12.33$
10 - 14	12.04$	12.04$
15 - 19	11.75$	11.75$
20 - 48	11.31$	11.31$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 48

Set of 1

RJH30H2DPK-M0. C(in): 1200pF. Cost): 80pF. Channel type: N. Trr Diode (Min.): 23 ns. Compatibility: Samsung PS42C450B1WXXU. Function: High Speed Power Switching. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 300V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.06us. CE diode: yes. Germanium diode: no. Quantity in stock updated on 27/12/2024, 19:25.

Technical documentation