Standard and Rectifier Diodes

Semiconductor material: silicon. Forward current (AV): 12A. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing). VRRM: 1500V. Note: 48...82kHz

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm--200App t=10mS

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: Ifsm--200Ap, t=10ms

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 20uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap t=8.3mS

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 5uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap (t=8.3ms)

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap/8.3mS

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.7V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap (t=10ms)

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: 20Ap f=10ms

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms

Semiconductor material: silicon. Forward current (AV): 2.3A. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Number of terminals: 2. Note: S,contr,av. Note: 45App/10ms

Diameter: 12.75mm. Cj: 250pF. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Forward current (AV): 35A. IFSM: 400A. RoHS: yes. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 1. Number of terminals: 1. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms

Diameter: 12.75mm. Cj: 250pF. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Forward current (AV): 35A. IFSM: 400A. RoHS: yes. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 1. Number of terminals: 1. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms

Diameter: 12.75mm. Cj: 430pF. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Forward current (AV): 60A. IFSM: 500A. RoHS: yes. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 1. Number of terminals: 1. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms

Diameter: 12.75mm. Cj: 430pF. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Forward current (AV): 60A. IFSM: 500A. RoHS: yes. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 1. Number of terminals: 1. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1.5A. IFSM: 30A. MRI (max): 1mA. MRI (min): 100uA. Marking on the case: BYS109. Number of terminals: 2. RoHS: yes. Weight: 0.064g. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Spec info: IFSM--30Ap, t=10ms

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 16 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 60A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.5x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifrm 60Ap tp=10ms

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms)

Double: Double. Semiconductor material: silicon. Forward current (AV): 5A. Tr: 50 ns. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.95V. VRRM: 500V. Note: Vf<1.05V. Note: S-L ->I<-. Note: 50A/10ms

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Forward current (AV): 30A. IFSM: 200A. MRI (max): 5mA. MRI (min): 100uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V. VRRM: 1000V. Number of terminals: 2. Note: metal part connected to the cathode. Quantity per case: 1. Spec info: IFSM--200Ap t=10ms

Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (AV): 1.4A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. VRRM: 1000V. Number of terminals: 2

Semiconductor material: silicon. Forward current (AV): 1.25A. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Number of terminals: 2. Note: Fast Silicon Mesa Rectifiers. Note: 30App/10ms

Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)

Cj: 220pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. Forward current (AV): 1A. IFSM: 20A. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Spec info: IFSM--20A t=10ms