Diameter: 12.75mm. Cj: 250pF. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Forward current (AV): 35A. IFSM: 400A. RoHS: yes. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 1. Number of terminals: 1. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms