Standard and Rectifier Diodes

Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 1.5A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 1mA. MRI (min): 100uA. Marking on the case: BYS109. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Weight: 0.064g. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V

Forward current (AV): 3A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.5x5.3mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 16 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 60Ap tp=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V

Forward current (AV): 5A. VRRM: 500V. Double: Double. Semiconductor material: silicon. Note: Vf<1.05V. Note: S-L ->I<-. Note: 50A/10ms. Tr: 50 ns. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.95V

Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Note: metal part connected to the cathode. MRI (max): 5mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V

Forward current (AV): 1.4A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Function: Fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tr: 200 ns. Threshold voltage Vf (max): 1.3V

Forward current (AV): 1.25A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Note: Fast Silicon Mesa Rectifiers. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V

Forward current (AV): 1A. IFSM: 20A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 40V. Cj: 220pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.55V

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 800V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V

ROHS: Yes. Housing: SOD57. Diode type: rectifier diode. Assembly/installation: THT. Max reverse voltage: 200V. Threshold voltage: 1.07V. Driving current: 2A. Reaction time: 25ns. Packaging: Ammo Pack. Semiconductor type: diode. Properties of semiconductor: 'glass passivated'. Semiconductor structure: diode. Pulse current max.: 50A. Conduction voltage (threshold voltage): 1.07V. Conditioning: Ammo Pack

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V

Forward current (AV): 3.5A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Cj: 190pF. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V

Forward current (AV): 3.1A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 600V. Cj: 125pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra fast low-loss controlled avalanche rect.. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.93V

Forward current (AV): 9A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC ( SOD59 ). VRRM: 500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 50uA. MRI (min): 2uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 110Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 0.9V

Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. Number of terminals: 3. Spec info: Ifsm 125A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB, SOT78. VRRM: 500V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Marking on the case: BYV34-500. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A t=10ms, 132A t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Silicon Mesa Rectifiers. Production date: 2013/40. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V

Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. Note: common cathode. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V